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| (R) BCY59 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T amb 25 o C at T C 25 o C Storage Temperature Max. Operating Junction Temperature Value 45 45 7 200 50 0.39 1 -55 to 175 175 Unit V V V mA mA W W o o C C 1/6 September 2002 BCY59 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 150 384.6 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEX I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (V BE = -0.2 V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 45 V V CE = 45 V V CE = 45 V V EB = 5 V I C = 2 mA 45 T C = 150 o C T C = 100 o C Min. Typ. 0.1 0.1 Max. 10 10 20 10 Unit nA A A nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter (on) Voltage DC Current Gain I E = 10 A 7 V V CE(sat) V BE(sat) V BE(on) h FE I C = 10 mA I C = 100 mA I C = 10 mA I C = 100 mA I C = 2 mA I C = 100 mA I C = 10 A Gr. VIII Gr. IX Gr. X I C = 2 mA Gr. VIII Gr. IX Gr. X I C = 10 mA Gr. VIII Gr. IX Gr. X I C = 100 mA Gr. VIII Gr. IX Gr. X I C = 2 mA Gr. VIII Gr. IX Gr. X I C = 10 mA I B = 0.25 mA I B = 2.5 mA I B = 0.25 mA I B = 2.5 mA V CE = 5 V V CE = 1 V V CE = 5 V 20 40 100 V CE = 5 V 180 250 380 V CE = 1 V 120 160 240 V CE = 1 V 45 60 60 V CE = 5 V f = 1 KHz 175 250 350 V CE = 5 V f = 100 MHz 0.6 0.75 0.55 0.12 0.4 0.7 0.9 0.65 0.75 140 195 280 250 350 500 260 365 520 0.35 0.7 0.85 1.2 0.7 V V V V V V 310 460 630 hfe Small Signal Current Gain 350 500 700 200 MHz fT Transition Frequency Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/6 BCY59 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol C CBO C EBO NF t on Parameter Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Turn-on Time IE = 0 IC = 0 Test Conditions VCB = 10 V V EB = 0.5 V f = 1MHz f = 1MHz Min. Typ. 3.5 11 2 Max. 6 15 6 Unit pF pF dB I C = 0.2 mA V CE = 5 V f = 1KHz R g = 2K f = 200Hz I C = 10 mA V CC = 10 V I B1 = 1 mA I C = 100 mA V CC = 10 V I B1 = 10 mA I C = 10 mA V CC = 10 V I B1 = - I B2 = 1 mA I C = 100 mA V CC = 10 V I B1 = - I B2 = 10 mA 85 55 480 480 150 150 800 800 ns ns ns ns t off Turn-off Time DC Current Gain Collector-Emitter Saturation Voltage 3/6 BCY59 Transition Frequeny Collector-Base Capacitance Noise Figure (f = 100 Hz) Noise Figure (f = 1 KHz) Noise Figure (f = 10 KHz) Noise Figure vs. Frequency 4/6 BCY59 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 5/6 BCY59 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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