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FDMC8651 N-Channel Power Trench(R) MOSFET
July 2008
FDMC8651
N-Channel Power Trench(R) MOSFET
30 V, 20 A, 6.1 m
Features
Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Applications
Synchronous rectifier 3.3 V input synchronous buck switch
Top
Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S
Power 33
MOSFET Maximum Ratings TA = 25 C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 C TA = 25 C (Note 1a) (Note 3) TC = 25 C TC = 25 C TA = 25 C (Note 1a) Ratings 30 12 20 64 15 60 128 41 2.3 -55 to +150 mJ W C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 53 C/W
Package Marking and Ordering Information
Device Marking FDMC8651 Device FDMC8651 Package Power 33 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
1
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FDMC8651 N-Channel Power Trench(R) MOSFET
Electrical Characteristics TJ = 25 C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V 30 27.5 1 100 V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 15 A VGS = 2.5 V, ID = 12 A VGS = 4.5 V, ID = 15 A, TJ = 125 C VDD = 5 V, ID = 15 A 0.8 1.1 -4.4 4.3 6.2 6.3 91 6.1 9.3 9.0 S m 1.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 2530 865 140 0.8 3365 1150 205 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 4.5 V Total Gate Charge Gate to Drain "Miller" Charge VDD = 15 V, ID = 15 A VDD = 15 V, ID = 15 A, VGS = 4.5 V, RGEN = 6 18 9 35 6 19.4 4.8 4.2 31 18 56 12 27.2 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 15 A VGS = 0 V, IS = 1.7 A IF = 15 A, di/dt = 100 A/s (Note 2) (Note 2) 0.8 0.7 35 17 1.3 1.2 55 30 V ns nC
NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper
b. 125 C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Starting TJ = 25 C; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
2
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FDMC8651 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
60
VGS = 2.5 V
6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
50
ID, DRAIN CURRENT (A) VGS = 2.2 V
5
VGS = 1.8 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 2 V VGS = 2.2 V
40
VGS = 4.5 V
30 20 10 0 0.0
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
4 3 2 1
VGS = 4.5 V VGS = 2.5 V
VGS = 2 V
VGS = 1.8 V
0 0 10 20 30 40 50 60
ID, DRAIN CURRENT (A)
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
20
SOURCE ON-RESISTANCE (m)
1.8
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.6 1.4 1.2 1.0 0.8
ID = 15 A VGS = 4.5 V
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
15
ID = 15 A
rDS(on), DRAIN TO
10
TJ = 125 oC
5
TJ = 25 oC
0.6 -75
-50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
60
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to Source Voltage
60
50
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX
10
VGS = 0 V
VDS = 5 V
40 30
TJ = 150 oC
TJ = 150 oC
1
TJ = 25 oC
0.1
20
TJ = 25 oC
10
TJ = -55
oC
0.01
TJ = -55 oC
0 0.5
1.0
1.5
2.0
2.5
3.0
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
3
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FDMC8651 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5000
4
CAPACITANCE (pF)
ID = 15 A
VDD = 10 V
VDD = 20 V
Ciss
3
VDD = 15 V
1000
Coss
2
1
100
f = 1 MHz VGS = 0 V
Crss
0 0 4 8 12 16 20 24
Qg, GATE CHARGE (nC)
50 0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
65
ID, DRAIN CURRENT (A)
30
IAS, AVALANCHE CURRENT (A)
52
VGS = 4.5 V
10
TJ = 25 oC TJ = 100 oC TJ = 125 oC
39
VGS = 2.5 V
26 13
Limited by Package RJC = 3 C/W
o
1 0.01
0.1
1
10
100 300
0 25
50
75
100
o
125
150
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current vs Case Temperature
2000 1000
VGS = 10 V
SINGLE PULSE RJA = 125 oC/W TA = 25 oC
100
10
1 ms 10 ms
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100
1
THIS AREA IS LIMITED BY rDS(on)
100 ms 1s 10 s DC
10
0.1
SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 C
o
0.01 0.01
0.1
1
10
100
1 0.5 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
4
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FDMC8651 N-Channel Power Trench(R) MOSFET
Typical Characteristics TJ = 25 C unless otherwise noted
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1 t2
1E-3
SINGLE PULSE RJA = 125 C/W
o
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
0.0001 -4 10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
5
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FDMC8651 N-Channel Power Trench(R) MOSFET
Dimensional Outline and Pad Layout
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
6
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FDMC8651 N-Channel Power Trench(R) MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I35
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
(c)2008 Fairchild Semiconductor Corporation FDMC8651 Rev.C
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