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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER HAN INC Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -100 -80 -5 -7 -1 UNIT V V V A A TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdownvoltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V VCE=-4V;IC=-1A f=1MHz ; VCB=-10V;IE=0 70 30 10 MHz pF MIN -80 -0.3 -0.9 -0.5 -1.4 -5 -5 240 |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton tstg tf Collector output capacitance ANG Turn-on time Storage time Fall time INCH Y 120-240 EMIC ES IB1=-IB2=-0.3A VCC=30V ,RL=10| DUC ON 250 TOR |I |I |I 0.4 2.5 0.5 s s s hFE-1 Classifications O 70-140 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1018 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018 SEM GE HAN INC OND IC TOR UC 4 |
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