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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2615 DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS For high voltage,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage Emitter-base voltage E SEM ANG H Open emitter Open base TC=25ae CONDITIONS OND IC TOR UC VALUE 500 400 7 8 80 150 -55~150 UNIT V V V A W ae ae Open collector Collector current (DC) Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2615 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; IB=0 IE=10mA; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=5V IC=8A ; VCE=5V 15 7 MIN 400 7 1.0 1.5 0.1 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 CHA IN E SEM NG OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2615 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of 2SC2615
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