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SMD Type
MOS Field Effect Transistor 2SK3433
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistance: RDS(on)1 = 26m RDS(on)2 = 41 m MAX. (VGS = 10 V, ID = 42 A)
+0.2 8.7-0.2
MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss =1500 pF TYP. Built-in gate protection diode
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 60 20 40 160 47 1.5 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =40A, VDD =48V, VGS = 10 V ID=20A,VGS(on)=10V,RG=10 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=20A VGS=10V,ID=20A VGS=4V,ID=20A 1.5 11 2.0 22 22 29 1500 250 120 35 320 89 120 30 5 8 26 41 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
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