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SRFET
TM
AON7700 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. - RoHS Compliant. - Halogen Free
DFN 3x3 Top View Bottom View
Features
VDS (V) = 30V (V GS = 10V) ID = 12A RDS(ON) < 8.5m (VGS = 10V) RDS(ON) < 10m (VGS = 4.5V)
D
Pin 1
S S S G
D D D D
G
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current C Continuous Drain Current G Power Dissipation Power Dissipation
B
Maximum 30 12 20 20 80 12 11 33 13 3.1 2 -55 to 150
Units V V
TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C
A
ID IDM IDSM PD PDSM TJ, TSTG
A
W
TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case D
C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 30 60 3.1
Max 40 75 3.7
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7700
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 80 6.7 9 8 27 0.39 0.5 6 3395 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 490 185 1 25 VGS=4.5V, VDS=15V, ID=10A 9.5 8.4 11 VGS=10V, VDS=15V, RL=1.25, RGEN=3 IF=12A, dI/dt=100A/s 16 38 21 28 15 36 1.5 33 4250 8.5 12 10 S V A pF pF pF nC nC nC ns ns ns ns ns nC m 1.7 Min 30 100 500 100 3 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/s
A: The value of R JA is measured with the device in a still air environment with T A =25C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. H. The maximum current rating is limited by bond-wires. Rev0: September 2007
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 40 4.5V 3.5V 5V ID(A) 35 30 25 ID (A) 40 3V 20 15 20 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 10 5 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=10V ID=12A VGS=4.5V ID=10A -40C 25C 125C VDS=5V
60
9 8.5 VGS=4.5V RDS(ON) (m) 8 7.5 7 6.5 6 0 5 10 15 20
1.4
1.2
V =10V GS
1
0.8
0.6 -60 -30 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 ID=12A 25
10
150
125C
1 RDS(ON) (m) 20 IS (A) 15 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 0.01 -40C 0.001 0.0 125C 0.1
25C
-40C
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 60 VDS=15V ID=12A Capacitance (pF) 6000 5000 Ciss 4000 3000 2000 1000 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
Coss
100 RDS(ON) limited
1000 10s 800 Power (W) 600 400 200 0 0.00001 TJ(Max)=150C TA=25C
ID (Amps)
10
50s 100s DC 500s
TJ(Max)=150C TC=25C 1 0.1 1 VDS (Volts)
10
100
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W Single Pulse 0.001 0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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