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| AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150C ID = 12A RDS(ON) < 0.55 (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25C unless otherwise noted AOT12N60 Parameter Symbol AOTF12N60 VDS Drain-Source Voltage 600 VGS Gate-Source Voltage 30 Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D G C Units V V A A mJ mJ V/ns W W/ oC C C TC=25C TC=100C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 12 8.1 48 5.5 450 900 5 223 1.8 -50 to 150 300 AOT12N60 65 0.5 0.56 12* 8.1* 50 0.4 Symbol RJA A RCS Maximum Case-to-Sink RJC Maximum Junction-to-Case D,F * Drain current limited by maximum junction temperature. Maximum Junction-to-Ambient AOTF12N60 65 -2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT12N60 / AOTF12N60 Electrical Characteristics (T J=25C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=150C ID=250A, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125C VDS=0V, VGS=30V VDS=VGS, ID=250A VGS=10V, ID=6A VDS=40V, ID=6A 3 4 0.46 20 0.72 1 12 48 1400 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 130 10 2.5 1751 164 13 3.3 40.5 VGS=10V, VDS=480V, ID=12A 8.7 17.9 39 VGS=10V, VDS=300V, ID=12A, RG=25 IF=12A,dI/dt=100A/s,VDS=100V 70 122 74 311 5.2 2100 200 16 5 50 11 22 50 85 150 90 373 6.2 600 700 0.65 1 10 100 5 0.55 V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C o Parameter Conditions Min Typ Max Units Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/s,VDS=100V A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. L=60mH, IAS=5.5A, VDD=50V, RG=25, Starting TJ=25C Rev 0. July 2008 50 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT12N60 / AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 10 5 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 1.0 2.5 VGS=5.5V 0.1 2 4 6 8 10 ID(A) 6V 6.5V 10 125C 100 VDS=40V -55C 1 25C VGS(Volts) Figure 2: Transfer Characteristics 200 16 Normalized On-Resistance 0.8 RDS(ON) (m) 2 VGS=10V ID=6A 1.5 0.6 VGS=10V 1 0.4 0.5 0.2 0 5 10 IF=12A,dI/dt=100A/s,VDS=100V IF=12A,dI/dt=100A/s,VDS=100V 0 15 20 25 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.2 BVDSS (Normalized) 1.1 1.0E+00 IS (A) 1 1.0E-01 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 o 50 25C 100 150 200 0.2 0.4 0.6 0.8 1.0 TJ ( C) Figure 5: Break Down vs. Junction Temperature VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT12N60 / AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 VDS=480V ID=12A Capacitance (pF) 1000 10000 Ciss 12 VGS (Volts) 9 Coss 6 100 Crss 3 0 0 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 60 10 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1 100 100 10s RDS(ON) limited 100s 1ms 100 200 16 10s RDS(ON) limited 100s 10 10 ID (Amps) ID (Amps) 1 10ms 0.1s DC TJ(Max)=150C TC=25C 1 10 100 1 DC 0.1 0.1 1ms 10ms 0.1s 1s 10s 0.01 IF=12A,dI/dt=100A/s,VDS=100V 0.01 1000 1 10 TJ(Max)=150C TC=25C 100 1000 IF=12A,dI/dt=100A/s,VDS=100V VDS (Volts) VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N60 (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N60 (Note F) 14 12 Current rating ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (C) Figure 11: Current De-rating (Note B) 50 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT12N60 / AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.45C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60 (Note F) 10 ZJC Normalized Transient Thermal Resistance 200 16 D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 Single Pulse 0.001 0.00001 Ton T IF=12A,dI/dt=100A/s,VDS=100V 0.0001 IF=12A,dI/dt=100A/s,VDS=100V 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60 (Note F) 50 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT12N60 / AOTF12N60 Gate Charge Test Circuit & Waveform Vgs Qg + VD C 10V DUT Vgs Ig + VDC Vds Qgs Q gd - Charge Resistive Switching Test Circuit & Waveforms R L Vds Vds Vgs Rg Vgs DU T + VD C 90% Vdd 10% Vgs t d(on) tr t on t d(o ff) t off tf Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI = 2 AR BVDSS + VDC Vdd - Id I AR Diode Recovery Tes t Circuit & Waveforms Vds + DUT Vgs Qrr = - Idt Vds Vgs Ig Isd L Isd IF + VD C dI/dt IRM trr Vdd Vds - Vdd Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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