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Ordering number : ENA0400
CPH3247
SANYO Semiconductors
DATA SHEET
CPH3247
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
* * * * * *
Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 120 120 80 6.5 2.5 4 500 0.9 150 --55 to +150 Unit V V V V A A mA W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz 300 350 14 Conditions Ratings min typ max 1 1 600 MHz pF Unit A A
Marking : DS
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506EA MS IM TB-00002342 No. A0400-1/4
CPH3247
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 120 120 80 6.5 40 920 32 Ratings min typ 90 80 0.84 max 135 120 1.2 Unit mV mV V V V V V ns ns ns
Package Dimensions
unit : mm 7015A-003
2.9 0.15
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR10
IB1 OUTPUT IB2 RB
0.6
3
0.2
RL
2.8
1.6
0.05
50 + 100F + 470F VCC=40V
0.6
1
0.95
2
0.4
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V
0.2
10IB1= --10IB2=IC=0.5A
0.9
2.0
IC -- VCE
80mA
2.0 1.8
IC -- VBE
VCE=5V
60m
A
Collector Current, IC -- A
Collector Current, IC -- A
1.6
100m
A
20mA
1.6 1.4 1.2 1.0
1.2
10mA
5mA
Ta=75C
0.8
0.8 0.6 0.4 0.2
2mA
0.4
1mA
0 0
IB=0mA
0.2 0.4 0.6 0.8 1.0 IT11004
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
--25C
IT11005
25C
No. A0400-2/4
CPH3247
1000 7 5
hFE -- IC
VCE=5V
3 2
VCE(sat) -- IC
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Ta=75C 25C
--25C
0.1 7 5 3 2
DC Current Gain, hFE
3
2
= Ta
75
C
5 --2
C
25
C
100 7 5 0.01
0.01 7 5 3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC -- A
5 3 2
IT11006 3
VCE(sat) -- IC
Collector Current, IC -- A
IT11007
VBE(sat) -- IC
IC / IB=20
IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
0.1 7 5 3 2
25
= Ta C 75
C
1.0
Ta= --25C
75C
25C
--2
C 5
7
5
0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A
7
IT11008 7
fT -- IC
VCE=10V
Collector Current, IC -- A
IT11009
Cob -- VCB
f=1MHz
5
Gain-Bandwidth Product, fT -- MHz
5
3 2
Output Capacitance, Cob -- pF
3 2
100 7 5
10 7 5
3 2 0.01 3 0.1
2
3
5
7 0.1
2
3
5
7 1.0
2
3
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
10 7 5 3 2
IT11010 1.0 0.9
Collector-to-Base Voltage, VCB -- V
5 7 100 IT11011
ASO
ICP=4A IC=2.5A
DC
PC -- Ta
<10s
Collector Dissipation, PC -- W
1m
10
op
s
10 ms
M
10
s s 0 500
Collector Current, IC -- A
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
ou
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
nt
0m
tio
ed
s
on
era
ac
er
n
am
ic
bo
ar
d
(6
00
m
m2 ! 0.
8m
0.001 0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
m
)
Collector-to-Emitter Voltage, VCE -- V
5 7 100 IT11012
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT11003
No. A0400-3/4
CPH3247
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice.
PS No. A0400-4/4

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