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| Ordering number : ENA1161 CPH5870 SANYO Semiconductors DATA SHEET CPH5870 Features * MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications * * Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance * Ultrahigh-speed switching * 2.5V drive. [SBD] * Short reverse recovery time (trr max=10ns). * Low forward voltage (VF max=0.55V). Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 60 10 1.8 7.2 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit When mounted on ceramic substrate (600mm20.8mm) 1unit Marking : YY Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408PE TI IM TC-00001359 No. A1161-1/5 CPH5870 Continued from preceding page. Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 800 5 --55 to +125 --55 to +125 V V mA A C C Symbol Conditions Ratings Unit Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=200A IF=500mA VR=25V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 50 0.5 17 10 0.55 50 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=4V, ID=1.8A VDS=30V, VGS=4V, ID=1.8A VDS=30V, VGS=4V, ID=1.8A IS=1.8A, VGS=0V 60 1 10 0.4 1.8 3.6 170 190 325 29 21 11 17 40 27 4.2 1.1 1.1 0.84 1.2 220 270 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7017A-005 Electrical Connection 5 0.6 2.9 0.15 4 3 5 4 3 0.2 2.8 1.6 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 Top view 0.6 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.9 0.2 No. A1161-2/5 CPH5870 Switching Time Test Circuit [MOSFET] trr Test Circuit VDD=30V [SBD] VIN 4V 0V VIN 100mA D G 10s --5V 100mA PW=10s D.C.1% 50 100 10 P.G 50 S CPH5870 trr 2.0 ID -- VDS V 4.0 3.5 V [MOSFET] 4.0 ID -- VGS VDS=10V [MOSFET] 1.8 3.5 3.0 2.5 2.0 1.5 1.0 5.0 Drain Current, ID -- A 3.0 V 1.6 1.4 V 2.0 V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 VGS=1.5V Drain Current, ID -- A 6.0 V 2.5 V 75C 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 500 Drain-to-Source Voltage, VDS -- V IT06812 [MOSFET] RDS(on) -- VGS 400 Gate-to-Source Voltage, VGS -- V IT06813 [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C ID=1A 350 300 250 200 150 100 50 0 --60 400 Ta= 2 0.5 --25 C 5C 300 VG =2 S =0 , ID 5V . .5A A 200 =4 V GS =1 I V, D .0 100 0 0 2 4 6 8 10 --40 --20 0 20 40 60 80 100 120 140 10mA 160 IT10367 ID=1A RL=30 VOUT Duty10% 10 Gate-to-Source Voltage, VGS -- V IT06814 [MOSFET] yfs -- ID VDS=10V Ambient Temperature, Ta -- C 7 5 3 2 IS -- VSD [MOSFET] VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 1.0 7 5 3 2 3 2 0.1 7 5 3 2 C 75 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 0.4 Ta= 75 C 25 C --25 C 0.6 0.8 -25 =Ta C C 25 Source Current, IS -- A 1.0 7 5 1.0 1.2 IT06817 Drain Current, ID -- A IT06816 Diode Forward Voltage, VSD -- V No. A1161-3/5 CPH5870 100 7 SW Time -- ID [MOSFET] 1000 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Ciss VDD=30V VGS=4V 7 5 Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 5 td(off) 3 2 3 tf 2 100 7 5 3 2 tr 10 7 5 0.1 td(on) Coss Crss 10 7 2 3 5 7 1.0 2 3 5 IT06818 0 5 10 15 20 25 30 Drain Current, ID -- A 4 VGS -- Qg [MOSFET] 2 10 7 5 Drain-to-Source Voltage, VDS -- V IT06819 [MOSFET] ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=2.0A IDP=7.2A Drain Current, ID -- A 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ID=1.8A 10 PW10s 10 0 s 1m s DC 2 era s tio n(T Operation in this a= area is limited by RDS(on). 2 op 10 ms 0m 1 5 C) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.1 Ta=25C Single pulse When mounted on ceramic substrate (600mm20.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT13497 Total Gate Charge, Qg -- nC 1.0 0.9 IT06820 PD -- Ta Drain-to-Source Voltage, VDS -- V [MOSFET] When mounted on ceramic substrate (600mm20.8mm) 1unit Collector Dissipation, PD -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 IT13498 IF -- VF [SBD] 5 2 1000 IR -- VR C Ta=125 [SBD] Reverse Current, IR -- A 5 2 100 5 2 10 5 2 1.0 5 2 0.1 Forward Current, IF -- A 25 C = Ta C 5 12 100C 75C 50C 25C 1.2 ID00339 0 10 20 30 40 50 60 70 ID00340 Forward Voltage, VF -- V Reverse Voltage, VR -- V No. A1161-4/5 CPH5870 Average Forward Power Dissipation, PF(AV) -- mW 600 PF(AV) -- IO (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave [SBD] 2 C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 500 100 7 5 3 2 (4) (2) (1) 400 (3) 300 200 360 10 7 5 3 1.0 Sine wave 100 180 0 0 100 200 300 400 360 500 600 ID00341 2 3 5 7 10 2 3 5 Average Output Current, IO -- A 7 IFSM -- t IS Reverse Voltage, VR -- V 7 100 ID00342 [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 6 5 20ms t 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00343 Note on usage : Since the CPH5870 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1161-5/5 |
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