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| SMD Type NPN Medium Power Transistor KCP56-16 Transistors SOT-223 Unit: mm +0.2 3.50-0.2 Features For AF driver and output stages High collector current Low collector-emitter saturation voltage +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 2 2.9 4.6 3 +0.1 0.70-0.1 1 base 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current (tP < 5ms) power dissipation thermal resistance from junction to ambient junction temperature storage temperature Symbol VCBO VCEO VEBO IC ICM PD RJA Tj Tstg Rating 100 80 5 1 1.5 1.5 94 150 -65 to +150 Unit V V V A A W /W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Testconditons IC= 0.1mA,IE=0 IC= 10mA,IB=0 IC= 10A,IE=0 IE = 0 A; VCB = 30 V IC = 0 A; VEB = 5 V IC = 5 mA; VCE = 2 V DC current gain hFE IC =150 mA; VCE = 2 V IC = 500 mA; VCE = 2 V Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC = 500mA; IB = 50 mA IC = 10 mA; VCE = 5 V; f = 100 MHz 130 25 100 25 0.5 V MHz 250 Min 100 80 5 100 100 nA nA Typ Max Unit +0.15 1.65-0.15 www.kexin.com.cn 1 |
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