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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1360 DESCRIPTION *With TO-126 package *Complement to type 2SC3423 *High transition frequency APPLICATIONS *Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55+150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -5 1.2 W UNIT V V V mA mA Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1360 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 B -150 V VCEsat VBE Collector-emitter saturation voltage IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V -1.0 V Base-emitter on voltage -0.8 V A A ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 hFE DC current gain IC=-10mA ; VCE=-5V 80 240 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 2.5 pF fT Transition frequency IC=-10mA ; VCE=-10V 200 MHz hFE Classifications O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1360 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1360 4 |
Price & Availability of 2SA1360
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