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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124 DESCRIPTION *High Gain Bandwidth Product fT= 1100 MHz TYP. APPLICATIONS *Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous 25 mA PC Collector Power Dissipation @TC=25 0.15 W TJ Junction Temperature 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3124 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 A hFE DC Current Gain IC= 8mA ; VCE= 3V 40 200 fT Current-Gain--Bandwidth Product IC= 8mA ; VCE= 10V 650 1100 MHz COB Reverse Transfer Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.9 1.3 pF rbb' * CC Base Time Constant VCB= 10V,IC= 8 mA, f= 30 MHz 7 12 ps isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3124 isc Websitewww.iscsemi.cn 4 |
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