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 INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4246
DESCRIPTION *High Current-Gain Bandwidth Product fT= 1500MHz TYP. @VCE = 10 V, IC = 8 mA *Low Noise
APPLICATIONS *TV tuner , UHF oscillator applications *TV tuner , UHF converter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IB
B
Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature
25
mA
PC
0.1
W
TJ
125
Tstg
Storage Temperature Range
-55~125
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4246
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
A
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0
A
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
15
V
hFE
DC Current Gain
IC= 8mA ; VCE= 3V
60
320
fT
Current-Gain--Bandwidth Product
IC= 8mA;VCE= 10V; f= 200MHz
1100
1500
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.9
1.3
pF
rbb' * CC
Base Time Constant
IC= 8mA ; VCB= 10V;f= 30MHz
7
12
ps
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4246
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC4246
isc Websitewww.iscsemi.cn
4


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