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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
2SD1444 2SD1444A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25ae )
SYMBOL
VCBO
IN

PARAMETER
Collector-base voltage
VCEO
Collector-emitter voltage
ANG CH
2SD1444
2SD1444A
E SEM
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 40 50 20
UNIT
V
2SD1444 Open base 2SD1444A Open collector
V 40 5 7 12 V A A
VEBO IC ICM
Emitter-base voltage Collector current (DC) Collector current-peak
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
30 W 2 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SD1444 V(BR)CEO Collector-emitter breakdown voltage 2SD1444A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1444 ICBO Collector cut-off current 2SD1444A IEBO hFE-1 hFE-2 fT COB Emitter cut-off current DC current gain DC current gain VCB=50V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=5A; IB=0.16A IC=5A; IB=0.16A VCB=40V; IE=0 IC=10mA , IB=0 CONDITIONS
2SD1444 2SD1444A
SYMBOL
MIN 20
TYP.
MAX
UNIT
V 40 0.6 1.5 V V
50
|I
A
50 45 60
|I
A
Transition frequency

Switching times ton tstg tf
CHA IN
Output capacitance Turn-on time Storage time Fall time
E SEM NG
IC=0.5A ; VCE=10V
OND IC
TOR UC
260 150 110 MHz pF
IE=0 ; VCB=10V;f=1MHz
0.3 IC=2A; IB1=-IB2=66mA 0.3 0.1
|I |I |I
s s s
hFE-2 Classifications R 60-120 Q 90-180 P 130-260
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1444 2SD1444A

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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