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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1444 2SD1444A Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO IN PARAMETER Collector-base voltage VCEO Collector-emitter voltage ANG CH 2SD1444 2SD1444A E SEM Open emitter OND IC CONDITIONS TOR UC VALUE 40 50 20 UNIT V 2SD1444 Open base 2SD1444A Open collector V 40 5 7 12 V A A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1444 V(BR)CEO Collector-emitter breakdown voltage 2SD1444A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1444 ICBO Collector cut-off current 2SD1444A IEBO hFE-1 hFE-2 fT COB Emitter cut-off current DC current gain DC current gain VCB=50V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=5A; IB=0.16A IC=5A; IB=0.16A VCB=40V; IE=0 IC=10mA , IB=0 CONDITIONS 2SD1444 2SD1444A SYMBOL MIN 20 TYP. MAX UNIT V 40 0.6 1.5 V V 50 |I A 50 45 60 |I A Transition frequency Switching times ton tstg tf CHA IN Output capacitance Turn-on time Storage time Fall time E SEM NG IC=0.5A ; VCE=10V OND IC TOR UC 260 150 110 MHz pF IE=0 ; VCB=10V;f=1MHz 0.3 IC=2A; IB1=-IB2=66mA 0.3 0.1 |I |I |I s s s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1444 2SD1444A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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