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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC' s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 SMD Type 2SD1622 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 Min Transistors Typ Max 100 100 560 Unit nA nA 150 8.5 120 0.9 60 50 5 40 300 1.2 MHz pF mV V V V V ns VCE(sat) IC = 500 mA , IB = 50 mA VBE(sat) IC = 500 mA , IB = 50 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ton Storage time tstg 350 ns Turn-off time tf 30 ns hFE Classification Marking Rank hFE R 100 200 S 140 280 DE T 200 400 U 280 560 2 www.kexin.com.cn |
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