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| Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diode DAP222 FEATURES: Power dissipation PD: 150 mW (Tamb=25) SWITCHING DIODE SOT-523 Collector current 100 mA IF: Collector-base voltage 80 V VR: Operating and storage junction temperature range TJ, Tstg: -55 to +150 CIRCUIT: 1 3 2 MARKING: P ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr unless otherwise specified) Test conditions MIN 80 0.1 1.2 3.5 4 MAX UNIT V IR= 100A VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA A V pF ns |
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