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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE Open base Tmb=25ae OND IC TOR UC VALUE 300 300 6 1 40 150 -55~150 ae ae UNIT V V V A W Open collector Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC1050 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A 1.2 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA ICEO Collector cut-off current VCE=300V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 30 HAN INC SEM GE OND IC TOR UC 200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1050 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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