 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V (Min) *Wide Area of Safe Operation APPLICATIONS *Designed for high speed switching and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w MAX 150 100 5 10 80 150 UNIT V V .cn mi e V IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2189 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V hFE DC Current Gain IC= 4A; VCE= 5V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current w w scs .i w VCB= 150V; IE= 0 VEB= 5V; IC= 0 .cn mi e 40 0.1 mA 0.1 mA isc Websitewww.iscsemi.cn |
Price & Availability of 2SC2189
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |