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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2052 DESCRIPTION *With TO-3PFa package *Wide area of safe operation *Complement to type 2SB1361 APPLICATIONS *Optimum for the output stage of a HiFi audio amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 9 15 3 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2052 TYP. MAX UNIT VCE(sat) Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A;VCE=5V 1.8 V A ICBO Collector cut-off current VCB=150V; IE=0 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 A hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 200 hFE-3 DC current gain IC=7A ; VCE=5V 15 fT Transition frequency IC=0.5A ; VCE=5V,f=1MHz 20 MHz COB Collector output capacitance f=1MHz; IE=0;VCB=10V 150 pF hFE-2 Classifications Q 60-120 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2052 Fig.2 outline dimensions (unindicated tolerance:0.30mm) 3 |
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