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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
DESCRIPTION *With TO-220C package *Collector-base voltage : VCBO=80V *Collector dissipation : PC=25W(TC=25) APPLICATIONS *Low frequency power amplifier *Power regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
*
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 55 5 3 25 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD288
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
55
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA; IE=0
80
V
V(BR)EBO
Emitter-base breakdown votage
IE=0.5mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1 A;IB=0.1 A
1.0
V A
ICBO
Collector cut-off current
VCB=50V; IE=0
50
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
A
hFE
DC current gain
IC=0.5A ; VCE=5V
40
240
hFE classifications R 40-80 O 70-140 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD288
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
4


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