 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Features * Generation 4 IGBT Technology * Standard speed: optimized for hard switching operating frequencies up to 1000 Hz * Very Low Conduction Losses * Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A TJ = 25C Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25C @ TC = 85C @ TC = 25C @ T C = 110C Max 600 480 220 800 800 20 2500 830 430 Units V A V W www.irf.com 1 GA200HS60S1 Bulletin I27222 03/06 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters VCES V CE(on) V GE(th) I CES I GES Min Typ Max Units Test Conditions V 1.13 1.08 4.5 0.025 1.21 1.18 6 1 10 250 mA nA V GE = 0V, I C = 1mA V GE = 15V, I C = 200A V GE = 15V, I C = 200A, T J = 125C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125C V GE = 20V Collector-to-Emitter Breakdown Voltage 600 Collector-to-Emitter Voltage Gate Threshold Voltage Collector-to-Emiter Leakage Current Gate-to-Emitter Leakage Current 3 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc Eon Eoff Ets Eon Eoff Ets Cies Coes Cres Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Units Test Conditions nC IC = 200A VCC = 400V VGE = 15V IC = 200A, VCC = 480V, VGE = 15V Rg = 10 free-wheeling DIODE: 30EPH06 IC = 200A, VCC = 480V, VGE = 15V Rg = 10 free-wheeling DIODE: 30EPH06, TJ = 125C 1600 1700 260 340 580 670 30 50 80 34 104 106 121 32500 2080 380 mJ mJ pF VGE = 0V VCC = 30V f = 1.0 MHz Thermal- Mechanical Specifications Parameters TJ TSTG R thJC RthCS T Operating Junction Temperature Range Storage Temperature Range Junction-to-Case (Per Leg) Case-to-Sink Mounting torque Weight Case to heatsink Case to terminal 1, 2, 3 185 0.1 4 3 g Nm Min - 40 - 40 Typ Max 150 125 0.15 Units C C/ W 2 www.irf.com GA200HS60S1 Bulletin I27222 03/06 1000 1000 Vge = 15V IC, Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 500s Pulse Width 100 Tj = 125C 100 Tj = 125C 10 Tj = 25C Tj = 25C 10 0.6 0.8 1.0 1.2 1.4 1.6 1 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Transfer Characteristics 160 VCE, Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 1.6 400A 1.4 140 120 100 80 60 40 20 0 0 100 200 300 400 500 1.2 200A 1 120A 0.8 20 40 60 80 100 120 140 160 TC, Case Temperature (C) Fig. 3 - Maximum Collector Current vs. Case Temperature TJ , Junction Temperature (C) Fig. 4 - Typical Collector-to-Emitter Voltage vs. Junction Temperature www.irf.com 3 GA200HS60S1 Bulletin I27222 03/06 16 VGE, Gate-to-Emitter Voltage (V) 50 45 Switching Losses (mJ) 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500 1800 typical value Eoff typ. Tj = 25C Vce = 480V Vge = 15V Ic = 200A 40 35 30 25 20 0 Eon typ. Free-wheeling diode 30EPH06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 5 - Typical Gate Charge vs. Gate-toEmitter Voltage RG, Gate Reistance () Fig. 6 - Typical Switching Losses vs Gate Resistance 80 70 Switching Losses (mJ) Tj = 125C Vce = 480V Vge = 15V Vge = 10 Free-wheeling diode 30EPH06 60 50 40 30 20 10 0 50 Eoff typ. Eon typ. 75 100 125 150 175 200 IC, Collector-to-Emitter Current (A) Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current 4 www.irf.com GA200HS60S1 Bulletin I27222 03/06 Outline Table Functional Diagram Electrical Diagram Dimensions in millimeters www.irf.com 5 GA200HS60S1 Bulletin I27222 03/06 Ordering Information Table Device Code GA 200 1 2 H 3 S 4 60 5 S 6 1 7 1 2 3 4 5 6 7 - Essential Part Number IGBT modules Current rating Int-A-Pak Voltage Code Speed/ Type Assy location IRCI (60 = 600V) (S = Standard Speed IGBT) (200 = 200A) Circuit Configuration (H = Half Bridge without f/w diode) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/06 6 www.irf.com |
Price & Availability of GA200HS60S1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |