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HAT2183WP
Silicon N Channel Power MOS FET Power Switching
REJ03G0530-0500 Rev.5.00 Oct 21, 2005
Features
* Low on-resistance * Low drive current * High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 150 30 20 40 20 40 20 30 30 4.17 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.5.00, Oct 21, 2005, page 1 of 6
HAT2183WP
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 150 -- -- 3.0 9 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 15 0.057 1200 260 25 32 53 69 11 27 7 10 0.88 110 Max -- 1 0.1 4.5 -- 0.064 -- -- -- -- -- -- -- -- -- -- 1.4 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VDS = 10 V Note4 ID = 10 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 7.5 Rg = 10 VDD = 120 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/dt = 100 A/s
Rev.5.00, Oct 21, 2005, page 2 of 6
HAT2183WP
Main Characteristics
Power vs. Temperature Derating
40 100 30 30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
10 3 1 0.3
1m
D
10
s
0
10
s
s
C (Tc Ope = 2 ratio 5C n )
Operation in this RDS(on) PW = 10 ms (1shot)
20
0.1 area is limited by 0.03 0.01 0.003 Ta = 25C 3 10 30 100 300 1000
10
0
50
100
150
200
0.001 1
Case Temperature Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20
Typical Transfer Characteristics 20
VDS = 10 V Pulse Test
10 V
7V
Pulse Test 6V
Drain Current ID (A)
Drain Current ID (A)
16 5.7 V 5.5 V 5.3 V 4
16 12 8 4
Tc = -75C
12
8
VGS = 5 V
25C
-25C
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source State Resistance vs. Drain Current
Drain to Source Saturation Voltage VDS(on) (V)
Drain Source On Sate Resistance RDS(on) ()
4
1 0.5 0.2 0.1 0.05 0.02 0.01 1
VGS = 10 V
3
2
ID = 20 A
1
10 A 5A
Pulse Test
0
4
8
12
16
20
3
10
30
100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00, Oct 21, 2005, page 3 of 6
HAT2183WP
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
0.20 VGS = 10 V 100 30 10 3 1 0.3 0.1 0.1 Tc = -25C 75C 25C Pulse Test ID = 20 A 10 A
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
0.16
0.12
0.08
5A
0.04
0
-25 0 25 50 75 100 125 150
VDS = 10 V Pulse Test 0.3 1 3 10 30 100
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
1000
Typical Capacitance vs. Drain to Source Voltage
10000 3000 VGS = 0 f = 1 MHz Ciss
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
1000 300 100 30 10 3 1 0 50
Coss
Crss
100
150
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 20 A 180 VDD = 30 V 60 V 120 V VDS
Switching Characteristics
Gate to Source Voltage VGS (V)
16 1000 tf VGS = 10 V, VDD = 75 V PW = 5 s, duty 1 % RG = 10 td(off) td(on) tf 10 tr
240
VGS
tr
12
Switching Time t (ns)
100
120
8
60
VDD = 120 V 60 V 30 V 8 16 24 32
4
0 0 40
1 0.1
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current
ID (A)
Rev.5.00, Oct 21, 2005, page 4 of 6
HAT2183WP
Reverse Drain Current vs. Source to Drain Voltage
20
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V ID = 10 mA 1 mA 3 0.1 mA
Reverse Drain Current IDR (A)
16
4
12 10 V 8 5V 4 VGS = 0, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
2
1
0 -25
0
25
50
75
100 125 150
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3
s (t)
Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17C/ W, Tc = 25C
PDM
0.03
0.02 1 0.0
1 sh
D=
PW T
PW T
p ot
uls
e
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s) Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 75 V 90% 90% td(off) tr Vin Vout Vout Monitor 10% 10% 10%
Waveform
90%
td(on)
tr
Rev.5.00, Oct 21, 2005, page 5 of 6
HAT2183WP
Package Dimensions
Package Name WPAK JEITA Package Code RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.085g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating)
Ordering Information
Part Name HAT2183WP-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00, Oct 21, 2005, page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .4.0

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