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HAT3018R, HAT3018RJ Silicon N/P Channel Power MOS FET High Speed Power Switching REJ03G0127-0100Z Rev.1.00 Oct.20.2003 Features * * * * Low on-resistance Capable of 4.5 V gate drive High density mounting "J" is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 Nch MOS2 Pch Rev.1.00, Oct.20.2003, page 1 of 15 HAT3018R, HAT3018RJ Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol HAT3018R Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. VDSS VGSS ID ID (pulse) IAP Note4 Note1 HAT3018RJ Pch -60 20 -5 -40 -- -- 2 3 150 Nch 60 20 6 48 6 3.08 2 3 150 Pch -60 20 -5 -40 -5 2.14 2 3 150 Unit 60 20 6 48 -- -- 2 3 150 V V A A A mJ W W C EARNote4 Pch Note2 PchNote3 Tch Tstg -55 to +150 -55 to +150 -55 to +150 -55 to +150 C PW 10s, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s Value at Tch = 25C, Rg 50 Rev.1.00, Oct.20.2003, page 2 of 15 HAT3018R, HAT3018RJ Electrical Characteristics * N Channel (Ta = 25C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ -- -- -- -- -- -- -- 9.5 28 40 1000 145 85 15 2 3 12 10 60 11 0.82 40 Max -- -- 1 -- 10 10 2.5 -- 35 50 -- -- -- -- -- -- -- -- -- -- 1.07 -- Unit V V A A A A V S m m pF pF pF nC nC nC ns ns ns ns V ns VDD = 25 V VGS = 10 V ID = 6 A VGS = 10 V, ID= 3 A VDD 30 V RL = 10 RG = 4.7 IF = 6 A, VGS = 0 Note 5 Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125C VGS = 16 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 ANote 5, VDS = 10 V ID = 3 ANote 5, VGS = 10 V ID = 3 ANote 5, VGS = 4.5 V VDS = 10 V, VGS = 0 f = 1 MHz Gate to Source breakdown voltage V(BR)GSS 20 Zero gate voltage drain current Zero gate voltage drain current HAT3018R IDSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF -- -- -- -- 1.5 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- HAT3018RJ IDSS Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery trr time Notes: 5. Pulse test IF = 6 A, VGS = 0 diF/dt = 100A/ s Rev.1.00, Oct.20.2003, page 3 of 15 HAT3018R, HAT3018RJ * P Channel (Ta = 25C) Item Drain to source breakdown voltage Gate to Source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current HAT3018R Symbol V(BR)DSS V(BR)GSS IDSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Min -60 20 -- -- -- -- -1.0 3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 5 60 90 1350 135 85 21 3 4 20 15 55 10 -0.85 25 Max -- -- -1 -- -10 10 -2.5 -- 76 130 -- -- -- -- -- -- -- -- -- -- -1.10 -- Unit V V A A A A V S m m pF pF pF nC nC nC ns ns ns ns V ns VDD = -25 V VGS = -10 V ID = -5 A VGS = -10 V, ID= -2.5 A VDD -30 V RL = 12 RG = 4.7 IF = -5 A, VGS = 0Note 5 IF = -5 A, VGS = 0 diF/dt = 100A/ s Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = -60 V, VGS = 0 VDS = -48 V, VGS = 0 Ta = 125C VGS = 16 V, VDS = 0 VDS = -10 V, ID = 1 mA ID = -2.5 ANote 5, VDS = -10 V ID = -2.5 ANote 5, VGS = -10 V ID = -2.5 ANote 5, VGS = -4.5V VDS = -10 V, VGS = 0 f = 1 MHz HAT3018RJ IDSS Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Notes: 5. Pulse test trr Rev.1.00, Oct.20.2003, page 4 of 15 HAT3018R, HAT3018RJ Main Characteristics * N Channel Maximum Safe Operation Area 10 10 PW 100 30 (A) Typical Output Characteristics s (A) 10 10 V 4V 8 Pulse Test 10 3 1 0.3 DC Op era tio Drain Current ID s Drain Current ID =1 1m s 0 s 0m 6 3V 4 n( 0.1 Operation in this area is 0.03 limited by RDS(on) PW < 1 ote 6 0s ) N 0.01 Ta = 25C 0.003 1 shot Pulse 1 Drive Operation 0.001 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 2 VGS= 2.5 V 0 2 4 6 Drain to Source voltage 8 10 VDS (V) Typical Transfer Characteristics Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.3 Pulse Test 10 VDS = 10 V Pulse Test (A) 8 Drain Current ID 0.2 ID = 5 A 0.1 2A 1A 20 15 5 10 Gate to Source Voltage VGS (V) 6 4 Tc = 75C 2 -25C 0 1 2 3 Gate to Source Voltage 4 5 VGS (V) 25C 0 Rev.1.00, Oct.20.2003, page 5 of 15 HAT3018R, HAT3018RJ Drain to Source on State Resistance RDS(on) () Pulse Test 0.5 0.2 0.1 0.05 VGS = 4.5 V 10 V Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Drain Current 1.0 Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 1, 2 ,5A 0.06 VGS = 4.5 V 0.04 1, 2, 5 A 0.02 0 -40 10 V 0.02 0.01 1 3 10 30 100 0 40 80 Tc 120 (C) 160 Drain Current ID (A) Case Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 50 20 10 5 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current ID (A) 100 Tc = -25C 25C 75C 500 di / dt = 100 A / s VGS = 0, Ta = 25C 200 100 50 20 10 0.1 0.3 1 3 10 30 IDR (A) 100 Reverse Drain Current Rev.1.00, Oct.20.2003, page 6 of 15 HAT3018R, HAT3018RJ Typical Capacitance vs. Drain to Source Voltage 5000 2000 100 Dynamic Input Characteristics ID = 6 A VGS 20 16 12 8 4 0 40 VDS (V) Capacitance C (pF) 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz 10 20 30 40 Drain to Source Voltage VDS Drain to Source Voltage Coss Crss 40 20 VDD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 50 (V) 0 Reverse Drain Current vs. Source to Drain Voltage 20 (A) Reverse Drain Current IDR 16 10 V 12 8 4 0 5V Pulse Test VGS = 0, -5 V 0.4 0.8 1.2 Source to Drain Voltage 1.6 VSD 2.0 (V) Rev.1.00, Oct.20.2003, page 7 of 15 Gate to Source Voltage Ciss 80 V = 50 V DD 25 V 10 V 60 VDS VGS (V) HAT3018R, HAT3018RJ Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Switching Characteristics 1000 300 Switching Time t (ns) 4.0 IAP = 6 A VDD = 25 V L = 100 H duty < 0.1 % Rg > 50 3.2 100 td(off) 30 10 3 1 0.1 tr td(on) tf VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 10 30 ID (A) 100 2.4 1.6 0.8 0 25 50 75 100 125 150 Channel Temperature Tch (C) Switching Time Test Circuit Vout Monitor D.U.T. RL Vout Vin 10 V V DS = 30V td(on) Vin Switching Time Waveform 90% 10% 10% 90% tr 90% td(off) tf 10% Vin Monitor Rg Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD Rev.1.00, Oct.20.2003, page 8 of 15 HAT3018R, HAT3018RJ * P Channel Maximum Safe Operation Area 10 10 PW =1 Typical Output Characteristics s -100 -30 (A) -10 -10 V (A) Pulse Test -10 -3 -1 -0.3 DC Op era 1m 0 s s s -8 Drain Current ID Drain Current ID 0m -6 V -4.5 V -3.5 V -6 tio -0.1 Operation in this area is -0.03 limited by RDS(on) n( PW < 1 ote 6 0s ) N -4 -0.01 Ta = 25C -0.003 1 shot Pulse 1 Drive Operation -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) -2 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 VDS (V) -10 Typical Transfer Characteristics Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -1 Pulse Test -0.8 -10 VDS = -10 V Pulse Test (A) Drain Current ID -8 -6 -0.6 -4 -0.4 ID = -5 A -0.2 0 0 -2 A -1 A -4 -8 -12 -16 VGS (V) -20 -2 Tc = 75C 0 -1 -2 25C -25C -3 -4 VGS (V) -5 Gate to Source Voltage Gate to Source Voltage Rev.1.00, Oct.20.2003, page 9 of 15 HAT3018R, HAT3018RJ Drain to Source on State Resistance RDS(on) () 0.5 0.2 0.1 0.05 VGS = -4.5 V Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.20 -5 A 0.15 VGS = -4.5 V 0.10 -5 A -1, -2 A ID = -1, -2 A -10 V 0.02 0.01 -1 0.05 0 -40 -10 V 0 40 80 -3 -10 -30 -100 120 Tc (C) 160 Drain Current ID (A) Case Temperature Forward Transfer Admittance |yfs| (S) 50 20 10 5 2 1 Forward Transfer Admittance vs. Drain Current Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di / dt = 100 A / s VGS = 0, Ta = 25C 200 100 50 Tc = -25C 25C 75C VDS = -10 V Pulse Test -1 -3 -10 -30 -100 20 10 -0.1 -0.3 0.5 -0.1 -0.3 -1 -3 -10 -30 IDR (A) -100 Drain Current ID (A) Reverse Drain Current Rev.1.00, Oct.20.2003, page 10 of 15 HAT3018R, HAT3018RJ Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics VDS (V) 5000 2000 0 Capacitance C (pF) -20 -4 ID = -5 A 1000 500 200 100 50 Crss 20 10 0 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 (V) Coss Ciss Drain to Source Voltage -40 VDS -60 VDD = -10 V -25 V -50 V VGS -8 -12 -80 -16 -20 40 -100 0 8 16 24 32 Drain to Source Voltage VDS Gate Charge Qg (nc) Reverse Drain Current vs. Source to Drain Voltage -10 (A) Pulse Test -8 -10 V -6 -5 V VGS = 0, 5 V Reverse Drain Current IDR -4 -2 0 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 VSD (V) Rev.1.00, Oct.20.2003, page 11 of 15 Gate to Source Voltage VGS (V) VDD = -10 V -25 V -50 V 0 HAT3018R, HAT3018RJ Switching Characteristics 1000 300 100 30 10 3 1 -0.1 -0.3 tf VGS = -10 V, VDD = -30 V PW = 5 s, duty < 1 % -1 -3 -10 -30 Drain Current ID (A) -100 td(off) tr td(on) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 2.5 IAP = -5 A VDD = -25 V duty < 0.1 % Rg > 50 Switching Time t (ns) 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 Channel Temperature Tch (C) Switching Time Waveform Vout Monitor Vin 10% 90% Switching Time Test Circuit Vin Monitor Rg D.U.T. RL V DD = -30 V Vout td(on) Vin -10 V 90% 10% tr td(off) 90% 10% tf Avalanche Test Circuit 1 2 Avalanche Waveform 2 V DS Monitor L I AP Monitor EAR = L * I AP * VDSS VDSS - V DD V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 0 VDD Rev.1.00, Oct.20.2003, page 12 of 15 HAT3018R, HAT3018RJ * In common Power vs. Temperature Derating Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PW 10 s 4.0 Pch (W) Channel Dissipation 3.0 2.0 1 Dr ive 2 1.0 Op iv Dr er e at Op ion er at ion 0 50 100 Case Temperature 150 Tc (C) 200 Rev.1.00, Oct.20.2003, page 13 of 15 HAT3018R, HAT3018RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) D=1 1 0.1 0.05 0.02 0.01 0.01 p ot uls e ch - f(t) = s (t) x ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 h 1s D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 uls e ch - f(t) = s (t) x ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM PW T 0.001 1s h p ot D= PW T 0.0001 10 100 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Rev.1.00, Oct.20.2003, page 14 of 15 HAT3018R, HAT3018RJ Package Dimensions As of January, 2003 Unit: mm 4.90 5.3 Max 5 8 1 4 3.95 *0.22 0.03 0.20 0.03 1.75 Max 0.75 Max 6.10 - 0.30 + 0.10 1.08 0 - 8 + 0.67 0.14 - 0.04 + 0.11 1.27 0.60 - 0.20 *0.42 0.08 0.40 0.06 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g Rev.1.00, Oct.20.2003, page 15 of 15 Sales Strategic Planning Div. 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