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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4589 DESCRIPTION *With TO-3PML package *High breakdown voltage *High speed switching APPLICATIONS *For color TV display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IC(surge) IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 10 20 0.6 50 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4589 TYP. MAX UNIT V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE= 800 V V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=8A; IB=1.6 A 5.0 V VBE(sat) Base-emitter saturation voltage IC=8A; IB=1.6 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 500 A IEBO Emitter cut-off current VEB=5V; IC=0 100 A hFE DC current gain IC=1A ; VCE=5V 8 38 tf Fall time ICP=7A; IB1=1.4A 0.2 0.5 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4589 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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