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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU326 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 375V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS *Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 800 375 10 6 8 3 75 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.33 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 2.5A; IB= 0.5A IC= 4A; IB= 1.25A IC= 2.5A; IB= 0.5A IC= 4A; IB= 1.25A VCE=800V; VBE= 0 VEB= 10V; IC= 0 IC= 1A; VCE= 5V IC= 0.2A; VCE= 10V, f= 1.0MHz 4 25 MIN 375 TYP. BU326 MAX UNIT V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES IEBO hFE fT 1.5 3.0 V V Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain 1.4 1.6 1.0 10 V V mA mA Current-Gain--Bandwidth Product MHz Switching Times Turn-On Time Storage Time IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V 0.5 3.5 s s s ton tstg tf Fall Time 0.5 isc Websitewww.iscsemi.cn 2 |
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