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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 92 24 44 Single
D
FEATURES
500 0.320
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications * Lower Gate Charge Results in Simpler Drive Reqirements * Enhanced dV/dt Capabilities Offer Improved Ruggedness
RoHS
COMPLIANT
TO-220 FULLPAK
* Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free
APPLICATIONS
G
GDS
S N-Channel MOSFET
* * * *
Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free TO-220 FULLPAK IRFIB7N50LPbF SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Energyb VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw LIMIT 500 30 6.8 4.3 27 0.37 550 6.8 4.6 46 24 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 C, L = 24 mH, RG = 25 , IAS = 6.8 A (see fig. 14). c. ISD 6.8 A, dI/dt 650 A/s, VDD VDS, dV/dt = 24 V/ns, TJ 150 C. d. 1.6 mm from case.
Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA RthJC TYP. MAX. 65 2.69 UNIT C/W
Maximum Junction-to-Case (Drain)
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time IS ISM VSD trr MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 4.1 Ab VDS = 50 V, ID = 4.1 A
500 3.0 4.7
0.44 0.32 -
5.0 100 50 2.0 0.38 -
V V/C V nA A mA S
Ciss Coss Crss Coss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz VGS = 0 V VDS = 0 V to 400 Vc
-
2220 230 23 2780 63 140 100 0.88 23 36 47 19
92 24 44 ns nC pF
VGS = 10 V
ID = 6.8 A, VDS = 400 V, see fig. 7 and 16b
-
f = 1 MHz, open drain
-
VGS = 10 V
VDD = 250 V, ID = 6.8 A, RG = 9.0 , see fig. 11a and 11bb
-
-
85 130 280 570
6.8 A 27 1.5 130 200 420 860 V ns
G
S
TJ = 25 C, IS = 6.8 A, VGS = 0
Vb
TJ = 25 C, IF = 6.8 A, TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 6.8 A, TJ = 125 C, dI/dt = 100 A/sb
Body Diode Reverse Recovery Charge
Qrr
nC
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Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Current Forward Turn-On Time IRRM ton TJ = 25 C 5.9 8.9 A SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
TOP
100
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current ()
10
TJ = 175C
1
5.0V 0.1
1
T J = 25C
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
VDS = 50V 60s PULSE WIDTH 0.1 3 4 5 6 7 8 9
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
2.5
ID = 6.8A VGS = 10V
10
BOTTOM
2.0
5.0V
1.5
1
1.0
0.5
60s PULSE WIDTH
Tj = 150C
0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
12.0 ID= 6.8A
VGS, Gate-to-Source Voltage (V)
C rss = C gd 10000 C oss = C ds + C gd
10.0
VDS= 400V
C, Capacitance(pF)
8.0 6.0
Ciss
1000
Coss
100
4.0
Crss
10 1 10 100 1000
2.0
0.0 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
12
100.00
10
ISD, Reverse Drain Current (A)
10.00 T J = 150C
8
Energy (J)
6
1.00
4
T J = 25C 0.10
2
VGS = 0V
0 0 50 100 150 200 250 300 350 400 450 500 550 VDS, Drain-to-Source Voltage (V)
0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
100
OPERATION IN THIS AREA LIMITED BY R (on) DS
VDS VGS
RD
ID, Drain-to-Source Current (A)
D.U.T. + - VDD
10
100sec
RG
10 V
1 DC 0.1 Tc = 25C Tj = 150C Single Pulse 1 10 100 1msec
Pulse width 1 s Duty factor 0.1 %
Fig. 11a - Switching Time Test Circuit
10msec 1000 10000
0.01 VDS, Drain-to-Source Voltage (V)
VDS 90 %
Fig. 9 - Maximum Safe Operating Area
10 % VGS
t d(on)
7 6
ID, Drain Current (A)
tr
t d(off) t f
Fig. 11b - Switching Time Waveforms
5 4 3 2 1 0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
R1 R1 J J 1 R2 R2 R3 R3 C 1 2 2 3 3
0.1
Ri (C/W) 0.2965 0.9847 1.4118
i (sec) 0.001144 0.151939 1.705500
0.01
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1 10 100
0.0001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
2500
EAS , Single Pulse Avalanche Energy (mJ)
VGS(th) Gate threshold Voltage (V)
2000
4.0
ID = 250A
3.0
ID 1.4A 1.7A BOTTOM 6.8A TOP
1500
1000
2.0
500
1.0 -75 -50 -25 0 25 50 75 100 125 150
0 25 50 75 100 125 150
T J , Temperature ( C )
Starting T J , Junction Temperature (C)
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14 - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
15 V 10 V VDS L Driver
QG QGS VG
A
Q GD
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
Charge
Fig. 16a - Basic Gate Charge Waveform
Fig. 15a - Unclamped Inductive Test Circuit
Current regulator Same type as D.U.T. V DS tp
12 V 0.2 F 0.3 F 50 k
D.U.T. VGS
3 mA
+ V - DS
I AS
IG
ID
Current sampling resistors
Fig. 15b - Unclamped Inductive Waveforms
Fig. 16b - Gate Charge Test Circuit
Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode
forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 17 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91177.
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Document Number: 91177 S-Pending-Rev. A, 24-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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