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| SMD Type Dual P-Channel 30-V (D-S) MOSFET KI4923DY IC IC Features TrenchFET Power MOSFETS Advanced High Cell Density Process 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 10 sec TJ, Tstg Symbol RthJA RthJF Typ 45 85 26 )* TA = 25 TA = 70 IDM IS PD -1.7 2 1.3 -55 to 150 Max 62.5 110 35 /W Unit Symbol VDS VGS ID -8.3 -6.6 -30 -0.9 1.1 0.7 W 10 secs Steady State -30 20 -6.2 -5 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI4923DY Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain-Source On-State Resistance* Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. IF = -1.7 A, di/dt = 100 A/ s VDD = -15 V, RL = 15 ID = -1 A, VGEN = -10V, RG = 6 VDS = -15V, VGS = -10 V, ID = -8.3 A Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 20 V Min -1 Typ Max -3 100 -1 -25 -30 0.017 0.025 26 -0.8 45.5 6.5 12.6 15 10 135 80 70 25 15 210 120 110 -1.2 70 0.021 .031 IC IC Unit V nA A A A VDS = -24V, VGS = 0 V VDS = -24V, VGS = 0 V, TJ = 85 VDS =- 5 V, VGS = -10 V VGS = -10 V, ID = -8.3A VGS = -4.5 V, ID = -6.8A VDS = -10 V, ID = -8.3A IS = -1.7 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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