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| NTE2410 Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411) Description: The NTE2410 is a silicon NPN transistor in an SOT-23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Power Dissipation (TA = +25C, FR-5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW Total Power Dissipation (TA = +25C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417C/mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. FR-5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0, Note 3 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO IEBO VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = +100C Emitter Cutoff Current VEB = 4V, IC = 0 160 180 6 - - - - - - - - - - - - 50 50 50 V V V nA A nA Symbol Test Conditions Min Typ Max Unit Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 3) DC Current Gain hFE IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V IC = 50mA, VCE = 5V Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 80 80 30 - - - - - - - - - - - - 250 - 0.15 0.20 1.0 1.0 V V V V Symbol Test Conditions Min Typ Max Unit Note 3. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%. .016 (0.48) C B E .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) |
Price & Availability of NTE2410
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