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| Semiconductor THN6701B SiGe NPN Transistor SOT-223 Unit in mm Applications - VHF and UHF power amplifier 6.5 3.0 4 Features - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz 1 2.3 0.7 4.6 3.5 7.0 2 3 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter Absolute Maximum Ratings (TA = 25 ) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 17 12 1.5 1 3 150 -65 ~ 150 Unit V V V A W 1 THN6701B Thermal Characteristics Symbol Rth j-a Parameter Thermal Resistance from Junction to Ambient Value 40 Unit K/W Electrical Characteristics (TA = 25 ) Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Output Power Power Gain Power Added Efficiency IEBO hFE Cre POUT GP PAE Test Conditions VCB = 15 V, IE = 0 mA VCE = 11 V, IB = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 6 V, IC = 200 mA VCB = 6 V, IE = 0 mA, f = 1 MHz VCE = 6 V, ICQ = 50 mA, f = 465 MHz, PIN = 25 dBm Min. 20 Typ. 4.5 35 10 60 Max. 1.0 5.0 1.0 200 pF dBm dB % Unit hFE Classification Marking hFE Value R6701 20 - 100 R6701* 80 - 200 2 THN6701B Typical Characteristics ( TA = 25, unless otherwise specified) Total Power Dissipation vs. Ambient Temperature Reverse Transfer Capacitance, Cre (pF) 4.0 Reverse Transfer Capacitance vs. Collector to Base Voltage 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 f = 1 MHz Total Power Dissipation, Ptot (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 o 150 Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) DC Current Gain vs. Collector Current 100 VCE = 6 V Collector Current vs. Collector to Emitter Voltage 0.5 IB = 10 mA Collector Current, IC (A) DC Current Gain, hFE 80 0.4 60 0.3 IB = 7.5 mA 40 0.2 IB = 5 mA 20 0.1 IB = 2.5 mA 0 -2 10 10 -1 10 0 0.0 0 2 4 6 8 10 Collector Current, IC (A) Collector to Emitter Voltage, VCE (V) 3 THN6701B Application Information RF performance at TS 60 in common emitter configuration Operation Mode CW, class-AB f (MHz) 465 VCE (V) 6 POUT (dBm) 35 GP (dB) 10 PAE (%) 60 Output Power or Power Gain vs. Input Power 45 f = 465 MHz, VCC = 6 V, ICQ = 50 mA Collector Current or Power Added Efficiency vs. Input Power 20 18 Power Gain, GP (dB) 1.6 1.4 Collector Current, IC (A) 1.2 PAE f = 465 MHz, VCC = 6 V, ICQ = 50 mA 80 70 60 50 40 IC 40 Output Power, POUT (dBm) POUT 35 GP 16 14 12 10 8 0 5 10 15 20 25 6 30 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 20 25 30 25 20 15 10 30 20 10 0 30 Input Power, PIN (dBm) Input Power, PIN (dBm) Power Added Efficiency, PAE (%) 4 THN6701B Evaluation Board (for FRS at 465 MHz) Part C8 C5 C4 L1 C1 C2 C3 C7 L2 C6 Value 100 pF (1608, Murata) 10 pF (1608, Murata) 18 pF (1608, Murata) 1 nF (1608, Murata) 15pF (1608, Murata) 100 nH (1608, Murata) 0.4 X 1.5 X 6T (Air Coil) C1, C4 C7, C9 C2 C3 C9 C5,C8 C6 L1 L2 FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm Evaluation board dimension = 119 50 mm2 Test condition: CW test, VCC = 6.0 V, ICQ = 50 mA, f = 465 MHz Test Circuit Schematic Diagram VBB 100 pF 1 nF VCC 1 nF 100 pF 100 nH L2 0.5 X 1.5 X 6T W=1.3 mm L=10 mm W=1.3 mm 100 pF L=42 mm OUTPUT INPUT 100 pF W=1.3 mm L=36 mm W=1.3 mm L=5 mm W=1.3 mm L=2 mm 15 pF 10 pF 18 pF 5 THN6701B Package Dimensions Unit : mm 0.95 0.85 S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 16 max 16 10 max 1.8 max 1 2.3 4.6 2 0.8 0.6 3 3.7 3.3 7.3 6.7 0.10 0.01 6 |
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