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XC74WL4066SR CMOS Logic ETR1326_001 GENERAL DESCRIPTION XC74WL4066SR is dual analog switch manufactured using silicon gate CMOS processes. The small supply current, which is one of the features of the CMOS logic, gives way to high speed operations which enables LS-TTL. With wave forming buffers connected internally, stabilized output can be achieved as the series offers high noise immunity. As the series is integrated into a mini molded, MSOP-8B package, high density mounting is possible. APPLICATIONS Palmtops Digital equipment FEATURES High Speed Operations : tpd = 1.5ns (TYP.) (VCC=5V) Operating Voltage Range : 2V ~ 5.5V Low Power Consumption : 2 A (MAX.)@Ta=25 Low ON Resistance Small Package :12 (TYP.) : MSOP-8B CMOS Logic Dual Analog Switch PIN CONFIGURATION FUNCTIONS CONTROL L H H=High level L=Low level STATE OFF ON LOGIC DIAGRAM 1/11 XC74WL4066SR ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Switch Output Current VCC,GND Current Power Dissipation (Ta = 25 ) Storage Temperature Range Note : Voltage is all ground standardized. Ta=-40 ~85 SYMBOL VCC VCONT Vi/o IIK IOK Ii/O ICC,IGND Pd Tstg RATINGS -0.5~+6.0 -0.5~+6.0 -0.5~VCC+0.5 -20 20 25 50 300 -65~+150 UNITS V V V mA mA mA mA mW RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage Input Voltage Output Voltage Operating Temperature Range Input Rise and Fall Time SYMBOL VCC VCONT Vi/o Topr tr,tf 0~200 0~100 CONDITIONS 2~5.5 0~5.5 0~VCC -40~+85 VCC=3.3V VCC=5V ns UNITS V V V DC ELECTRICAL CHARACTERISTICS PARAMETER High Level Control Input Voltage SYMBOL VCC(V) 2.0 VIH 3.0 5.5 Low Level Control Input Voltage 2.0 VIL 3.0 5.5 2.0 Peak ON Resistance RONmax 3.0 4.5 2.0 ON Resistance RON(1) 3.0 4.5 Switch ON Resistance Differential Power Off Leak Current Power On Leak Current Control Input Current Static Supply Current 2.0 RON IS(OFF) IS(ON) ICONT ICC 3.0 4.5 5.5 5.5 0~5.5 5.5 VCONT=VIH VIN=0~VCC IIN/OUT=1mA VCONT=VIH VIN=GND or VCC IIN/OUT=1mA VCONT=VIH VIN=0~VCC IIN/OUT=1mA VCONT=VIL, VIN=VCC, VOUT=GND VCONT=VIH, VIN=VCC, OR GND VIN=VCC or GND VIN=VCC or GND 130 22 12 23 14 10 13 3 2 CONDITIONS Ta=25 MIN. 1.50 2.10 3.85 0.50 0.90 1.65 350 50 25 50 30 20 35 6 4 0.1 0.1 0.1 2.0 TYP. MAX. Ta=-40 MIN. 1.50 2.10 3.85 0.50 0.90 1.65 550 65 35 65 40 25 55 8 6 1.0 1.0 1.0 20.0 A A A A V V ~85 MAX. UNITS 2/11 XC74WL4066SR SWITCHING ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CL VCC(V) 2.0 15pF tPLH Delay Time tPHL 2.0 50pF 3.3 5.0 2.0 15pF Output Enable Time tZL tZH 50pF 3.3 5.0 2.0 3.3 5.0 2.0 15pF Output Disable Time tLZ tHZ 50pF 3.3 5.0 2.0 3.3 5.0 RL=10k fIN=1kHz RL=600 -3dB Band Width 50pF 3.0 20log10 VIN VOUT =-3dB (tr=tf=3ns) Ta=-40 MAX. 12.0 4.0 3.0 20.0 6.0 5.0 45.0 9.0 7.5 50.0 10.0 8.5 45.0 17.0 14.0 60.0 23.0 20.0 MIN. ~85 MAX. 15.0 5.5 4.0 23.0 8.0 6.0 60.0 11.0 9.0 65.0 12.0 10.0 55.0 20.0 18.0 75.0 27.0 25.0 ns ns ns ns ns ns UNITS CONDITIONS Ta=25 MIN. TYP. 2.5 2.0 1.5 4.0 3.0 2.0 8.5 3.3 5.0 RL=1k 4.5 3.5 9.0 RL=1k 5.0 4.0 9.0 RL=1k 7.0 6.0 12.0 RL=1k 10.0 8.0 Sine Wave Distortion Rate 50pF 3.0 0.05 % 200 MHz Feed Through (Switch off) 50pF 3.0 RL=600 -60 dB 2.0 Cross Talk (Control Switches) 50pF 3.0 4.5 2.0 Cross Talk (Between Switches) Control Input Capacitance Switch Input/Output Capacitance Feed Through Capacitance Power Dissipation Capacitance CCONT CIN/OUT CIN-OUT Cpd 50pF 3.0 4.5 RL=600 fCONT=1MHz 60 100 150 -60 mV RL=600 fIN=1MHz -60 -60 5 6 0.5 13 10 10 dB pF pF pF pF 3/11 XC74WL4066SR ON RESISTANCE Test Circuit Input Voltage Dependancies of ON Resistance 4/11 XC74WL4066SR POWER OFF LEAK CURRENT POWER ON LEAK CURRENT 5/11 XC74WL4066SR DELAY TIME Test Circuit Waveform 6/11 XC74WL4066SR OUTPUT ENABLE TIME, OUTPUT DISABLE TIME Test Circuit Waveform 7/11 XC74WL4066SR SINE WAVE DISTORTION RATE -3dB BAND WIDTH 8/11 XC74WL4066SR FEED THROUGH TEST CIRCUIT CROSS TALK (CONTROL INPUT Test Circuit SWITCH OUTPUT) Waveform 9/11 XC74WL4066SR CROSS TALK (BETWEEN SWITCHES) Test Circuit Waveform 10/11 XC74WL4066SR 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 11/11 |
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