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| SMD Type High-voltage Switching Transistor 2SA1875 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High fT : fT=400MHz(typ). High breakdown voltage : VCEO Large current capacitance. Adoption of FBET process. 200V(min). +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25 Junction Temperature Storage Temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating -200 -200 -3 -300 -600 -30 0.8 12 150 -55 to 150 Unit V V V mA mA mA W W 3.80 www.kexin.com.cn 1 SMD Type 2SA1875 Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Transistors unless otherwise stated Symbol ICBO IEBO hFE fT Cob Cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Testconditons VCB=-150V, IE=0 VEB=-2V, IC=0 VCE=-10V, IC=-50mA VCE=-10V, IC=-250mA VCE=-10V, IC=-100mA VCB=-30V, f=1MHz VCB=-30V, f=1MHz IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA IC=-10iA, IE=0 IC=-1mA, RBE= IE=-100iA, IC=0 -200 -200 -3 60 20 400 5.0 4.2 -1.0 -1 MHz pF pF V V V V V Min Typ Max -0.1 -1.0 320 Unit iA iA hFE Classification Rank hFE D 60 to 120 E 100 to 200 F 160 to 320 2 www.kexin.com.cn |
Price & Availability of 2SA1875
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