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| Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION With TO-3PN package Complement to type 2SD2390 APPLICATIONS Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage INCH Base current Emitter-base voltage Collector current ANG Open collector EMIC ES OND TOR UC VALUE -160 -150 -5 -10 1 UNIT V V V A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-4V IE=0 ; VCB=10V;f=1MHz IC=-2A ; VCE=-12V 5000 230 50 MIN -150 TYP. 2SB1560 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT MAX UNIT V -2.5 -3.0 -100 -100 |I |I V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time HAN INC P 6500-20000 SEM GE Y 15000-30000 IC=-7A;RL=10| IB1=- IB2=-7mA VCC=-70V OND IC TOR UC 0.8 |I 3.0 1.2 |I s |I s s hFE Classifications O 5000-12000 2 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE 2SB1560 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 SEM GE HAN INC OND IC TOR UC 4 |
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