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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB727K DESCRIPTION *With TO-220C package *Complement to type 2SD768K *DARLINGTON APPLICATIONS *For medium speed and power switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -6 -10 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA, RBE=> IE=-50mA, IC=0 IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA VCB=-120V, IE=0 VCE=-100V, RBE=> IC=-3A ; VCE=-3V 1000 MIN -120 -7 2SB727K SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 20000 V V V V A A Switching times ton toff Turn-on time IC=-3A, IB1=-IB2=-6mA Turn-off time 3.0 s 1.0 s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB727K Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB727K 4 |
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