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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 120 120 5 8 0.8 UNIT V V V A A W ae ae Open base Open collector Emitter-base voltage Total power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.6A IC=4A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 35 MIN 120 2SC3181N SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob TYP. MAX UNIT V 2.0 1.5 5 5 160 |I |I V V A A hFE-1 Classifications R 55-110 O CHA IN 80-160 E SEM NG OND IC TOR UC 190 30 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3181N CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N CHA IN E SEM NG OND IC TOR UC 4 |
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