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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4371 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400(Min) *Excellent Switching Times: tr= 1.0s(Max), tf= 1.0s(Max)@ IC= 4A APPLICATIONS *Switching regulator application *High voltage switching application *High Speed DC-DC converter application *Fluorescent light ballastor application ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w w scs .i w 500 V 400 V 7 V 5 A 7 A 1 A 2 W .cn mi e Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain CONDITIONS IC= 10mA ; IB= 0 IC= 1mA ; IE= 0 IC= 5A; IB= 1A B 2SC4371 MIN 400 500 TYP. MAX UNIT V V 1.0 1.5 100 1 V V A mA IC= 5A; IB= 1A B VCB= 400V; IE= 0 VEB= 7V; IC= 0 IC= 3A ; VCE= 5V Switching times tr tstg tf Rise Time Storage Time Fall Time w w scs .i w IC= 5A ; VCE= 5V .cn mi e 12 8 1.0 2.5 1.0 s s s IB1= -IB2= 0.4A; VCC200V RL= 50;PW=20s Duty1% isc Websitewww.iscsemi.cn 2 |
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