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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1497 DESCRIPTION *With TO-3PN package *High voltage ,high reliability *Wide area of safe operation APPLICATIONS *High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 7 6 7 16 50 150 -45~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1497 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 7 V V(BR)CEO VCEsat Collector-emitter breakdown voltage IC=10mA; RBE= IC=5A; IB=1A 600 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.3A ; VCE=5V 10 30 hFE-2 tf DC current gain IC=5A ; VCE=5V ICP=4A;IB1=1.3A; LB=0 5 s Fall time 2.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1497 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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