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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2148 DESCRIPTION With TO-3PML package High voltage ,high speed Low collector saturation voltage APPLICATIONS High speed switching power supply output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 16 4 50 150 -55~150 ae ae UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SD2148 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA , IB=0 700 V V(BR)EBO VCE(sat) Emitter-base breakdown voltage IE=1mA , IC=0 IC=7A ;IB=1.4A 5 V Collector-emitter saturation voltage 5.0 V VBE(sat) Base-emitter saturation voltage IC=7A ;IB=1.4A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=7A ; VCE=5V 4 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2148 Fig.2 outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
Price & Availability of 2SD2148
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