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| SMD Type HEXFET Power MOSFET KRF7313 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, Ta = 25 Continuous Drain Current,TC = 70 Pulsed Drain Current Maximum Power Dissipation Ta = 25 *3 Maximum Power Dissipation Ta = 70 Single Pulse Avalanche Energy *4 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt*2 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 *3 EAS IAR EAR dv/dt TJ,TSTG R JA *3 *3 Symbol VDS VGS ID ID IDM PD Rating 30 20 6.5 30 2.5 2 1.3 82 4 0.2 5.8 -55 to + 150 62.5 /W mJ A mJ V/ns W A Unit V *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t *4 Starting TJ=25 ,L=10mH,RG=25 , IAS=4.0A www.kexin.com.cn 1 SMD Type KRF7313 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IF =1.7A di/dt = 100A/ s*1 0.78 45 58 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250A TJ ID = 1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 Min 30 Typ Max Unit V 0.022 0.023 0.029 0.032 0.046 1.0 14 1.0 25 100 -100 22 2.6 6.4 8.1 8.9 26 33 3.9 9.6 12 13 39 26 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 15V, ID = 5.8A*1 VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 V S A IGSS VGS = 20V VGS = -20V ID = 5.8A VDS = 15V VGS = 10V,*1 VDD = 15V ID = 1.0A RG = 6.0 RD = 15 VGS = 0V VDS = 25V f = 1.0MHz *1 nA nC ns 17 650 320 130 pF 2.5 A 30 1.0 68 87 V ns C Body Diode) *2 *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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