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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION *With TO-3PFa package *Complement to type 2SD1110A *Wide area of safe operation APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -7 -7 80 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB849A TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -130 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V A ICBO Collector cut-off current VCB=-120V; IE=0 -50 IEBO Emitter cut-off current VEB=-6V; IC=0 -50 A hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 200 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency IC=-0.2A ; VCE=-5V 14 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB849A Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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