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BUW133A RKP412KS 5201A 70551 ADVANCE 124141 0169A 9510F13
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2740
DESCRIPTION *With TO-3PN package *High speed switching *High VCBO *Low saturation voltage APPLICATIONS *For high speed switching applications PINNING
PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 20 5 100 W UNIT V V V A A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE -2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=5A; IB=1A IC=5A; IB=1A VCB=500V IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 MIN 400
2SC2740
TYP.
MAX
UNIT V
1.0 1.5 100 100
V V A A
11
MHz
Switching times ton tstg tf Turn-on time Storage time Fall time VCC=10V IC=5A; IB1=-IB2=1A 1.0 2.5 1.0 s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2740
Fig.2 outline dimensions
3


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