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PD- 95215A
IRF7353D2PBF
l l l l l l l
Co-Pack HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint Lead-Free
FETKYa MOSFET / Schottky Diode
A A S G
1 8
K K D D
VDSS = 30V RDS(on) = 0.029 Schottky VF = 0.52V
2
7
3
6
4
5
Top View
Description
The FETKYTM family of Co-Pack HEXFET(R) Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25C unless otherwise noted)
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current A Pulsed Drain Current A Power Dissipation A Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range
Maximum
6.5 5.2 52 2.0 1.3 16 20 -5.0 -55 to +150
Units
A
W mW/C V V/ns C
Thermal Resistance Ratings
Parameter
RJA Junction-to-Ambient Notes: A Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) A Starting TJ = 25C, L = 10mH, RG = 25, IAS = 4.0A A ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C A Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec.
Maximum
62.5
Units
C/W
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IRF7353D2PBF
MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Min. -- -- -- -- -- Typ. Max. Units Conditions -- -- V VGS = 0V, ID = 250A 0.023 0.029 VGS = 10V, ID = 5.8A 0.032 0.046 VGS = 4.5V, ID = 4.7A -- -- V VDS = V GS, ID = 250A 14 -- S VDS = 24V, ID = 5.8A -- 1.0 VDS = 24V, VGS = 0V A -- 25 VDS = 24V, VGS = 0V, TJ = 55C -- 100 VGS = 20V nA -- -100 VGS = -20V 22 33 ID = 5.8A 2.6 3.9 nC VDS = 24V 6.4 9.6 VGS = 10V (see figure 8) 8.1 12 VDD = -5V 8.9 13 ID = 1.0A ns 26 39 RG = 6.0 18 26 RD = 15 650 -- VGS = 0V 320 -- pF VDS = 25V 130 -- = 1.0MHz (see figure 7) Typ. Max. Units -- 2.5 A -- 30 0.78 1.0 V 45 68 ns 58 87 nC Conditions
MOSFET Source-Drain Ratings and Characteristics
Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge
TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s A
Schottky Diode Maximum Ratings
IF (av)
ISM
Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current
Max. Units 3.2 A 2.0 200 20 A
Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C 50% Duty Cycle. Rectangular Wave, Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied
Schottky Diode Electrical Specifications
VFM Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.30 mA 37 310 pF 4900 V/s Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 30V Tj = 25C Tj = 125C Vr = 5Vdc (100kHz to 1 MHz) 25C Rated Vr
Irm Ct dv/dt
Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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IRF7353D2PBF
Power MOSFET Characteristics
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
10
3.0V
3.0V
1 0.1 1
20s PULSE WIDTH TJ = 25C A
10
1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
V DS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 5.8A
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 150C
10
1.5
1.0
0.5
1 3.0 3.5 4.0
VDS = 10V 20s PULSE WIDTH
4.5 5.0
A
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7353D2PBF
Power MOSFET Characteristics
RDS (on) , Drain-to-Source On Resistance ()
0.040
0.036
V GS = 4.5V
RDS (on) , Drain-to-Source On Resistance ()
0.12
0.10
0.08
0.032
0.06
0.028
I D = 5.8A
0.04
0.024
V GS = 10V
0.02
0.020 0 10 20 30 40
A
0.00 0 3 6 9 12 15
A
I D , Drain Current (A)
V GS , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain Current
1200
Fig 6. Typical On-Resistance Vs. Gate Voltage
20
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
ID = 5.8A VDS = 15V
16
C, Capacitance (pF)
900
Ciss Coss
12
600
8
300
Crss
4
0 1 10 100
A
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage
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IRF7353D2PBF
Power MOSFET Characteristics
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
ISD , Reverse Drain Current (A)
TJ = 150C
10
TJ = 25C
1 0.4 0.6 0.8 1.0 1.2
VGS = 0V
1.4
A
1.6
VSD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
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IRF7353D2PBF
Schottky Diode Characteristics
100
100
TJ = 150C
10
125C 100C
Reverse Current - IR (mA)
1
75C
0.1
50C 25C
Instantaneous Forward Current - IF (A)
10
0.01
TJ = 150C TJ = 125C TJ = 25C
0.001 0 5 10 15 20 25 30
A
Reverse Voltage - V R (V)
1
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
Allowable Ambient Temperature - (C)
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 V r = 80% Rated R thJA = 62.5C/W Square wave
DC
0.1 0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V (V) Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop Characteristics
A
Average Forward Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current
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IRF7353D2PBF SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGTH OF LEAD FOR S OLDERING TO A S UBST RATE. 3X 1.27 [.050] 6.46 [.255]
FOOT PRINT 8X 0.72 [.028]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FETKY) DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER
INTERNATIONAL RECTIFIER LOGO
XXXX 807D1
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IRF7353D2PBF SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04
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