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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ15003 DESCRIPTION With TO-3 package Complement to type MJ15004 Excellent safe operating area APPLICATIONS For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 140 140 5 20 5 -25 250 200 -65~200 UNIT V V V A A A W ae ae Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.7 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A ;IB=0 IC=5A; IB=0.5A IC=5A ; VCE=2V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150ae VEB=5V; IC=0 IC=5A ; VCE=2V VCE=50Vdc,t=1 s, Nonrepetitive Is/b Second breakdown collector current With base forward biased 25 5 MIN 140 MJ15003 SYMBOL VCEO(SUS) VCEsat VBE ICEO ICEX IEBO hFE TYP. MAX UNIT V 1.0 2.0 0.25 0.1 2.0 0.1 150 V V mA mA mA COB fT Output capacitance VCE=100Vdc,t=1 s, Nonrepetitive IE=0 ; VCB=10V;f=1.0MHz CHA IN Transition frequency E SEM NG OND IC TOR UC 1 1000 2 A pF MHz IC=0.5A ; VCE=10V;f=0.5MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ15003 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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