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PHOTODIODE
Si photodiode
S9682, S9683
Highly reliable photodiode for VUV detection
S9682 and S9683 are Si photodiodes specifically designed to detect VUV (vacuum ultraviolet) radiation with high reliability. These photodiodes are hermetically sealed in a metal package with a quartz window. There is no outgassing from the inside of the package, eliminating the cause of decrease in VUV sensitivity.
Features
Applications
l Highly stable sensitivity and dark current against ArF excimer laser radiation (=193 nm) l Hermetically sealed metal package with quartz window l Large active area:
S9682: 5.8 x 5.8 mm (TO-8 metal package) S9683: 10 x 10 mm (1 inch metal package)
l ArF excimer laser detection l UV detection
s Absolute maximum ratings (Ta=25 C)
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -40 to +100 -55 to +125 Unit V C C
s Electrical and optical characteristics (Ta=25 C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Rise time Symbol p S ID Ct tr =193 nm VR=10 mV VR=0 V, f=10 kHz VR=0 V, RL=1 k 10 to 90 % Condition Min. 45 S9682 Typ. 193 to 1000 760 60 0.02 1.0 2 Max. 0.5 Min. 45 S9683 Typ. 193 to 1000 760 60 0.05 4.0 9 Max. 1.0 Unit nm nm mA/W nA nF s
1
Si photodiode
s Variation in sensitivity due to VUV exposure
[Typ. ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, =193 nm, pulse width=15 ns (FWHM)] 120
S9682, S9683
RELATIVE SENSITIVITY (%)
100
80
S9682, S9683
60
40 CONVENTIONAL TYPE 20
0 6 1 x 10
5 x 10
6
1 x 107
NUMBER OF SHOT
KSPDB0254EA
s Dimensional outlines (unit: mm) S9682
13.9 0.2 12.35 0.1 9.1 0.1 Y
ACTIVE AREA 10 x 10
S9683
42.0 0.3 34.0 0.2
( 24.5)
WINDOW 16.0 0.2
ACTIVE AREA 5.8 x 5.8
0.085
4.5 0.2
QUARTZ WINDOW
2.0
QUARTZ WINDOW (t=1.0)
(1.9)
7.5 0.2
ANODE TERMINAL MARK 1.4 Center of active area relative to center of cap -0.485X+0.315 -0.4Y+0.4
0.5 MAX.
(15.0)
0.45 LEAD
PHOTOSENSITIVE SURFACE
COMMON TO CASE
COMMON TO CASE
KSPDA0165EB
7.62 0.2
19 0.5
7.1 0.3
PHOTOSENSITIVE SURFACE
27.4 0.2
X
(2 x)
4
KSPDA0166EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KSPD1069E02 Feb. 2006 DN

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