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| S amHop Microelectronics C orp. S T U408D J uly.25 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m W ) Max S uper high dense cell design for low R DS (ON). ID 16A R DS (ON) R ugged and reliable. TO252-4L package. E S D P rotected. D1 D2 30 @ V G S = 10V 40 @ V G S =4.5V D1/D2 G1 G2 S1 G1 S2 TO-252-4L G2 S1 N-ch S2 N-ch ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed a S ymbol VDS VGS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD TJ, TS TG Limit 40 20 16 13.8 50 8 11 7.7 -55 to 175 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U408D E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 5V, VGS = 4.5V VDS = 5V, ID =8A Min Typ C Max Unit 40 1 10 1 1.8 22 30 10 15 735 120 70 3.0 30 40 V uA uA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qg Qgs Qgd VDD = 20V, ID = 3A, VGS = 10V, R GE N = 3 ohm 13 15 26 10 15 7.2 2.0 3.8 ns ns ns ns nC nC nC nC VDS =20V, ID = 8A, VGS =10V 2 S T U408D E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 8A Min Typ Max Unit 0.94 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 30 V G S =4.5V 25 12 15 ID, Drain C urrent(A) 20 VGS =10V ID, Drain C urrent (A) V G S =3.5V V G S =8V 9 T j=125 C 6 25 C 3 -55 C 0 0 0.8 1.6 2.4 3.2 4.0 4.8 15 10 5 0 V G S =3V 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 F igure 2. Trans fer C haracteris tics 2.0 R DS (ON), On-R es is tance Normalized 50 1.8 1.6 1.4 1.2 1.0 0.0 V G S =4.5V ID=6A V G S =10V ID=8A R DS (on) (m W) 40 30 20 V G S =4.5V V G S =10V 10 0 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U408D V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=8A Is , S ource-drain current (A) 50 125 C R DS (on) (m W) 10.0 40 30 20 10 0 75 C 25 C 25 C 125 C 75 C 0 1.0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate- S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U408D 1200 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =20V ID=8A 1000 C , C apacitance (pF ) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 6 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 300 Tr 100 80 ID, Drain C urrent (A) it 10 10 ms S witching T ime (ns ) 100 60 10 T D(off) T D(on) Tf 10 R DS ( ) ON L im 1m s 1s DC 0m s 1 1 V DS =20V ,ID=1A V G S =10V 1 0.5 0.1 V G S =10V S ingle P ulse T c=25 C 6 10 60 100 300 600 1 10 30 60 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 2 F igure 12. Maximum S afe O perating Area r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U408D P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H C M K J D L S P G REF . Millimeters MIN MAX A B C D P S G H J K L M 6.40 5.2 6.80 2.20 0.50 0.40 2.20 0.45 0 0.90 5.40 6.80 5.50 10.20 3.00 0.80 0.60 2.40 0.60 0.15 1.50 5.80 1.27 REF. 6 S T U408D TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape 6 4 TO-252-4L Reel UNIT:P 7 |
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