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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1291 DESCRIPTION *With TO-220C package *Low saturation voltage *Complement to type 2SD1720 *Excellent DC current gain characteristics *Wide area of safe operation APPLICATIONS *For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -5 -10 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA , IB=0 IC=-50A , IE=0 IE=-50A , IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-60V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V ,f=1MHz 100 MIN -60 -60 -5 2SB1291 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V V V -1.5 -1.5 -10 -10 320 12 150 V V A A MHz pF hFE Classifications E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1291 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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