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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-202 package *Low breakdown voltage *High current *High fT APPLICATIONS *For audio frequency power amplifier and low speed switching applications *Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC1096 Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25? ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25? PC Collector power dissipation TC=25? Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ? ? CONDITIONS Open emitter Open base Open collector VALUE 40 30 5 3 6 0.6 1.2 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1096 TYP. MAX UNIT VCEsat VBEsat V(BR)CEO ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=3A ;IB=0.3A IC=3A ;IB=0.3A IC=10mA; IB=0 VCB=30V;IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1.0A ; VCE=5V IE=0; VCB=10V;f=1.0MHz IC=0.1A ; VCE=5V 20 40 55 65 30 2.0 2.0 V V V 1.0 1.0 A A 250 pF MHz u hFE-1 classifications N 40-60 M 50-100 L 80-160 K 120-250 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1096 Fig.2 outline dimensions 3 |
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