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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV48B DESCRIPTION *With TO-3PN package. *High voltage. *Fast switching speed. APPLICATIONS *Designed for switching and industrial applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature tp<5ms TC=25 tp<5ms Open emitter Open base Open collector CONDITIONS VALUE 1200 600 7 15 30 4 20 125 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV48B CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=6A; IB=1.5A IC=10A; IB=4A IC=6A; IB=1.5A IC=10A; IB=4A VCE=1200V ;VBE=0 T=125C VCE=600V; IC=0 VEB=6V; IC=0 IC=1A ; VCE=5V 15 MIN 600 1.5 3 1.5 2 0.5 3 1 1 50 TYP. MAX UNIT V V V V V mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES ICEO IEBO hFE Switching times: ton ts tf Turn-on time Storage time Fall time IC=6A; IB1=- IB2=1.5A VCC=250V 0.5 1.5 0.2 1.0 3.0 0.7 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV48B Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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