 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Low Voltage EPD TVS Diode For ESD and Latch-Up Protection PROTECTION PRODUCTS Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. The SLVU2.8 features an integrated low capacitance compensation diode that allows the device to be configured to protect one unidirectional line or, when paired with a second SLVU2.8, two high-speed line pairs. The low capacitance design of the SLVU2.8 means signal integrity is preserved in high-speed applications such as 10/100 Ethernet. The SLVU2.8 is in an SOT23 package and has a low 2.8 volt working voltage. It is specifically designed to protect low voltage components such as Ethernet transceivers, laser diodes, ASICs, and high-speed RAM. The low clamping voltage of the SLVU2.8 minimizes the stress on the protected IC. The SLV series TVS diodes will exceed the surge requirements of IEC 61000-4-2, Level 4. SLVU2.8 Features 400 Watts peak pulse power (tp = 8/20s) Transient protection for high speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20s) One device protects one unidirectional line Two devices protect two high-speed line pairs Low capacitance Low leakage current Low operating and clamping voltages Solid-state EPD TVS process technology Mechanical Characteristics JEDEC SOT23 package Molding compound flammability rating: UL 94V-0 Marking : U2.8 Packaging : Tape and Reel per EIA 481 Applications 10/100 Ethernet WAN/LAN Equipment Switching Systems Desktops, Servers, Notebooks & Handhelds Laser Diode Protection Base Stations Circuit Diagram Schematic & PIN Configuration 3 1 3 2 1 2 SOT23 (Top View) Revision 06/25/2008 1 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20s) Peak Pulse Current (tp = 8/20s) Lead Soldering Temp erature Op erating Temp erature Storage Temp erature Symbol Pp k IP P TL TJ TSTG Value 400 24 260 (10 seconds) -55 to +125 -55 to +150 Units Watts A o C C C o o Electrical Characteristics SLVU2.8 Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Clamp ing Voltage Junction Cap acitance Symbo l VRWM V PT VSB IR VC VC VC VC VC Cj Conditions Pin 3 to 1 or Pin 2 to 1 IPT = 2A, Pin 3 to 1 ISB = 50mA, Pin 3 to 1 VRWM = 2.8V, T=25C Pin 3 to 1 or Pin 2 to 1 IPP = 2A, tp = 8/20s Pi n 3 to 1 IPP = 5A, tp = 8/20s Pi n 3 to 1 IPP = 24A, tp = 8/20s Pi n 3 to 1 IPP = 5A, tp = 8/20s Pi n 2 to 1 IPP = 24A, tp = 8/20s Pi n 2 to 1 Pin 3 to 1 and 2 (Pin 1 and 2 tied together) VR = 0V, f = 1MHz Pin 2 to 1 (p in 3 N .C.) VR = 0V, f = 1MHz 70 3.0 2.8 1 3.9 7 12.5 8.5 15 100 Minimum Typical Maximum 2.8 Units V V V A V V V V V pF Junction Cap acitance Steering Diode Characteristics Reverse Breakdown Voltage Reverse Leakage Current Forward Voltage (c) 2008 Semtech Corp. Cj 5 10 pF V BR IR D VF IT= 10A, Pin 3 to 2 VRWM = 2.8V, T=25C Pi n 3 to 2 IF= 1A, Pin 2 to 3 2 40 1 2 V A V www.semtech.com SLVU2.8 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 10 Peak Pulse Power - Ppk (kW) Power Derating Curve 110 100 90 % of Rated Power or IPP 80 70 60 50 40 30 20 10 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (s) 100 1000 0 0 25 50 75 100 o 125 150 Ambient Temperature - TA ( C) Pulse Waveform 110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 td = I PP /2 e -t W aveform Parameters: tr = 8s td = 20s Clamping Voltage vs. Peak Pulse Current 18 16 Clamping Voltage - VC (V) 14 12 10 Pin 3 to 1 8 6 4 2 0 Waveform Parameters: tr = 8s td = 20s 0 5 10 15 20 25 30 35 0 0 5 10 15 T im e (s) 20 25 30 Peak Pulse Current - IPP (A) Forward Voltage vs. Forward Current 16 14 Forward Voltage - VF (V) 12 1.4 2 1.8 1.6 Normalized Capacitance vs. Reverse Voltage f = 1MHz Pin 3 to Pin 1 and 2 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Waveform Parameters: tr = 8s td = 20s CJ(VR ) / C J(V R=0) 1.2 1 0.8 0.6 Pin 2 to Pin 1 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 Forward Current - IF (A) Reverse Voltage - VR (V) (c) 2008 Semtech Corp. 3 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Typical Characteristics (Continued) Insertion Loss S21 CH1 S21 LOG 10 dB /REF 0 dB START . 030 MHz STOP 3000. 000000 MHz (c) 2008 Semtech Corp. 4 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Applications Information Device Connection Options Electronic equipment is susceptible to transient disturbances from a variety of sources including: ESD to an open connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables "hot plugged" into I/O ports. The SLVU2.8 is designed to protect sensitive components from damage and latchup which may result from such transient events. The SLVU2.8 can be configured to protect either one unidirectional line or two (one line pair) high-speed data lines. The options for connecting the devices are as follows: 1 . Protection of one unidirectional I/O line: Protection of one data line is achieved by connecting pin 3 to the protected line, and pins 1 and 2 to ground. This connection option will allow the device to operate on lines with positive polarity signal transitions (during normal operation). In this configuration, the device adds a maximum loading capacitance of 100pF. During positive duration transients, the internal TVS diode will be reversed biased and will act in the avalanche mode, conducting the transient current from pin 3 to 1. The transient will be clamped at or below the rated clamping voltage of the device. For negative duration transients, the internal steering diode is forward biased, conducting the transient current from pin 2 to 3. The transient is clamped below the rated forward voltage drop of the diode. 2. Low capacitance protection of one differential line pair: Protection of a high-speed differential line pair is achieved by connecting two devices in antiparallel. Pin 1 of the first device is connected to line 1 and pin 2 is connected to line 2. Pin 2 of the second device is connected to line 1 and pin 1 is connected to line 2 as shown. Pin 3 must be left open on both devices. During negative duration transients, the first device will conduct from pin 2 to 1. The steering diode conducts in the forward direction while the TVS will avalanche and conduct in the reverse direction. During positive transients, the second device will conduct in the same manner. In this configuration, the total loading capacitance is the sum of the capacitance (between pins 1 and 2) of each device (typically <10pF) making this configuration suitable for high-speed interfaces such as 10/100 Ethernet (See application note SI98-02). (c) 2008 Semtech Corp. 5 1 SLVU2.8 Circuit Diagram 3 2 Protection of one unidirectional line Low capacitance protection of one high-speed line pair EPD TVS Characteristics The SLVU2.8 is constructed using Semtech's proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the SLVU2.8 can effectively operate at 2.8V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does www.semtech.com SLVU2.8 PROTECTION PRODUCTS Applications Information (continued) not avalanche, but will "punch-through" to a conducting state. This structure results in a device with superior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient event, the device will begin to conduct as it is biased in the reverse direction. When the punchthrough voltage (VPT) is exceeded, the device enters a low impedance state, diverting the transient current away from the protected circuit. When the device is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristic due to its structure. This must be considered when connecting the device to a power supply rail. To return to a non-conducting state, the current through the device must fall below the snap-back current (approximately < 50mA). IPP SLVU2.8 Laser Diode Protection Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the SLVU2.8 near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. A matte tin finish is composed of 100% tin solder with large grains. Since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the PCB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. ISB IPT VBRR IR VRWM V V VC SB PT IBRR EPD TVS IV Characteristic Curve (c) 2008 Semtech Corp. 6 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Typical Applications 10/100 Ethernet Protection Circuit (Reference Semtech Application Note SI98-02 for more information) 10/100 Ethernet "Enhanced" Lightning Protection Circuit (Reference Semtech Application Note SI98-02 for more information) (c) 2008 Semtech Corp. 7 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Applications Information - SPICE Model 0.6 nH SLVU2.8 Spice Model SLVU2.8 Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm A mp Farad sec --eV D1 (T VS) 6.09E-14 3.4 13.8 0.389 10E-3 24.75E-12 2.541E-9 0.145 1.1 1.11 D2 (LCR D) 8.57E-9 420 0.62 0.15 10E-3 3.15E-12 2.541E-9 0.113 1.1 1.11 (c) 2008 Semtech Corp. 8 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Outline Drawing - SOT23 D e1 3 A DIM H B A A1 A2 b c D E E1 e e1 L L1 N 0 aaa bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .035 .000 .035 .012 .003 .110 .082 .047 .037 .114 .093 .051 .075 .037 .020 .022 3 .004 .008 .044 .004 .040 .020 .007 .120 .104 .055 0.89 1.12 0.01 0.10 0.88 0.95 1.02 0.30 0.51 0.08 0.18 2.80 2.90 3.04 2.10 2.37 2.64 1.20 1.30 1.40 1.90 BSC 0.95 BSC 0.40 0.50 0.60 (0.55) 3 0 8 0.10 0.20 E1 E SEATING PLANE C GAUGE PLANE 0.25 L L1 DETAIL A 0 c .015 .024 1 2 bxN e bbb CAB 0 8 A A2 3X aaa C SIDE VIEW SEATING PLANE SEE DETAIL A A1 C NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -BTO BE DETERMINED AT DATUM PLANE -H- 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Land Pattern - SOT23 X Y DIM Z G C C E E1 G X Y Z DIMENSIONS INCHES MILLIMETERS (.087) .037 .075 .031 .039 .055 .141 (2.20) 0.95 1.90 0.80 1.00 1.40 3.60 Y E E1 NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A. (c) 2008 Semtech Corp. 9 www.semtech.com SLVU2.8 PROTECTION PRODUCTS Marking U2.8 Ordering Information Part Number SLVU2.8.TC SLVU2.8.TCT Lead Finish SnPb Pb free Qty per R eel 3,000 3,000 R eel Size 7 Inch 7 Inch Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 www.semtech.com (c) 2008 Semtech Corp. 10 |
Price & Availability of SLVU28TC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |