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| ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC -IB Ptot RJA Tj TS Value 30 25 5 1 100 1 125 150 -55 to +150 O Unit V V V A mA W C/W O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SB564 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group M L K at -VCE=1V, -IC=1A Collector Cutoff Current at -VCB=30V Emitter Cutoff Current at -VEB=5V Base Emitter Saturation Voltage at -IC=1.0A, -IB=100mA Collector Emitter Saturation Voltage at -IC=1.0A, -IB=100mA Base Emitter Voltage at -VCE=6.0V, -IC=10mA Gain Bandwidth Product at -VCE=6.0V, -IE=10mA Collector Base Capacitance at -VCB=6V, f=1MHz COB 36 pF fT 110 MHz -VBE 0.6 0.64 0.7 V -VCE(sat) 0.25 0.35 V -VBE(sat) 1.0 1.2 V -IEBO 100 nA -ICBO 100 nA hFE hFE hFE hFE 90 135 200 50 100 180 270 400 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SB564 TYPICAL CHARACTERISTICS (Ta=25oC unless otherwise noted) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT-Total Power Dissipation-W SAFE OPERATING AREAS (TRANSIENT THERMAL RESISTANCE) I C-Collector Current-mA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -100 -80 -60 -40 -20 400 - 450 -350 -300 -250 -200 1.0 0.8 0.6 0.4 0.2 I C-Collector Current-A -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50 -100 VCE-Collector to Emitter Voltage-V 10 ms PW =2 0 DC 0ms -150 -100 I R=-50 A 0 0 -2 -4 -6 -8 -10 0 50 100 150 200 250 Ta-Ambient Temperature- oC VCE-Collector to Emitter Voltage-V VCE(sat)-Collector Saturation Voltage-V I C-Collector Current-A -0.8 -0.6 -0.4 -0.2 -8 -7 -6 P T= -5 1.0 W -4 -3 -2 I B=-1mA 0 -1.2 VBE(sat)-Base Saturation Voltage-V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -1.0 -9 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT Ic=10.I B Pulsed -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1m -2m -5m -10m -20m -50m -100m -200m -500m -1 -2 -5 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT Ic=10.I B Pulsed -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -1m 0 -0.4 -0.8 -1.6 -2.0 -2m -5m -10m -20m -50m -100m -200m -500m -1 -2 -5 VCE-Collector to Emitter Voltage-V I C-Collector Curretn - A I C-Collector Curretn - A fT-Gain Bandwidth Product-MHz COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE -1000 VcE=-6.0V -500 Pulsed 75 o C DC CURRENT GAIN vs. COLLECTOR CURRENT VcE=-1.0V Pulsed h FE-DC Current Gain GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 500 200 100 50 20 10 12 5 10 20 50 100 200 500 1000 VcE=-1.0V -200 I C-Collector Current-mA -100 -50 -20 -10 -5 -2 Ta= 1000 500 200 100 50 20 10 Ta=75 o C 25 o 25o -25o -25 -1m -2m -5m -10m -20m -50m -100m -200m -500m -1 -2 o -5 I C-Collector Curretn - A I E-Emitter Current-mA -1 -0.4 -0.5 -0.6 -0.7 -0.8-0.9 -1.0 VBE-Base to Emitter Voltage-V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SB564 Cob-Collector to Base Capacitance-pF COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 100 50 20 10 5 2 1 -0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 f=1.0MHz I E=0 VCB-Collector to Base Voltage-V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 |
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