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LED DOT MATRIX BL-M40X571XX n O O O O O O Features: 106.50mm (4.0" F10.0 dot matrix LED display, BI-COLOR ) Low current operation. Excellent character appearance. Easy mounting on P.C. Boards or sockets. I.C. Compatible. ROHS Compliance.
Electrical-optical characteristics: (Ta=25ae (Test Condition: IF=20mA) )
Part No Chip Emitted Color Material P (nm) VF Unit:V Iv Typ Max TYP.(mcd)
Row Cathode Column Anode
Row Anode Column Cathode
BL-M40A571SG-XX
BL-M40B571SG-XX
Super Red Green
AlGaInP GaP/GaP GaAsP/Ga P GaP/GaP AlGaInP AlGaInP AlGaInP AlGaInP
660 570 635 570 660 574 630 574
2.10 2.20 2.10 2.20 2.10 2.20 2.10 2.20
2.50 2.50 2.50 2.50 2.50 2.50 2.50 2.50
155 140 120 140 180 200 170 200
BL-M40A571EG-XX
BL-M40B571EG-XX
Orange Green
BL-M40A571DUG-X X BL-M40A571UEUGXX
BL-M40B571DUG-X X BL-M40B571UEUGXX
Ultra Red Ultra Green Ultra Orange Ultra Green
n
-XX: Surface / Lens color 0 Number Ref Surface Color White Epoxy Color Water clear
1 Black White diffused
2 Gray Red Diffused
3 Red Green Diffused
4 Green Yellow Diffused
5
n
Absolute maximum ratings (Ta=25 C) S
30 75 5 150
Parameter Forward Current I F Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature TOPR Storage Temperature TSTG Lead Soldering Temperature T SOL
G
30 80 5 150
E
30 80 5 150
D
30 75 5 150
UG
30 75 5 150
UE
30 65 5 150
U nit
mA mW V mA
-40 to +80 -40 to +85 Max.2605 aefor 3 sec Max. (1.6mm from the base of the epoxy bulb)
ae ae ae
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LED DOT MATRIX BL-M40X571XX
o Package configuration & Internal circuit diagram
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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LED DOT MATRIX BL-M40X571XX
o
1.0
Typical electrical-optical characteristics curves:
(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)
0.5
0 350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(|E ) p
(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (D) - InGaAl/SiC 525nm/Ultra Green
50 FORWARD CURRENT(mA)
REL ATIVE LUMIN OU S IN TENSITY 3 2 1 0.5 0.2 0.1 -30 -20 -10
1
8 64 5
23
4.0 1 3.0 FORWARD CURRENT(mA)
50 40 30 20 10 0
RELATIVE LUMINOUS INTENSITY
40 30 20 10 0 1.2
1 6 2,4,8,A 3 5
2.0
5 B
1.0 0 20 40 60 80 100
1.6
2.0
2.4
2.6
3.0
20
40
60
80
100
FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE
FORWARD CURRENT (mA) RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT
AMBIENT TEMPERATURE Ta(ae ) FORWARD CURRENT VS. AMBIENT TEMPERATURE
1 5 4 2 3
3KHz 300KHz 1KHz 100KHz F-REFRESH RATE 10 10KHz 9 8 7 6 5 Ipeak M AX. IDC MAX. 4 3 2 0 10 20 30 40 50 60 70 1 AMBIENT TEMPERATURE Ta(ae ) 1 10 100 1000 tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K) 10,000 Ipeak MAX. IDC MAX.
30KHz 3KHz 300Hz 100KHz 10KHz 1KHz 100Hz 10 9 8 7 6 5 4 3 2 1 1 10 100 1000 tp-PULSE DURATION uS (5)
10,000
NOTE:25ae free air temperature unless otherwise specified
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